Novel characterization techniques for interface related defects in semiconductor-insulator systems

This paper describes new attempts to harness scanning probe microscopy methods to solve problems associated with the quantification of the non-uniform distribution of defects and interface states. This is specifically in relation to the use of thin dielectrics in ultra small device structures. In particular the combination of UV laser and soft x-ray (synchrotron radiation) pumped scanning probe experiments is described. For example, atomic force microscopy (AFM) used in the Kelvin probe mode can provide nm scale spatial resolution of surface or (more significantly) buried interface charge. The Kelvin probe provides a non-contact measure of the long-range electric fields due to fixed charge; such fields spread beyond the van der Walls' interaction.