Nuclear spin switch in semiconductor quantum dots

A. I. Tartakovskii, T. Wright, A. Russell, V. I. Fal'Ko, A. B. Van'Kov, J. Skiba-Szymanska, I. Drouzas, R. S. Kolodka, M. S. Skolnick, P. W. Fry, A. Tahraoui, H. Y. Liu, M. Hopkinson

    Research output: Contribution to journalArticlepeer-review


    We show that by illuminating an InGaAs/GaAs self-assembled quantum dot with circularly polarized light, the nuclei of atoms constituting the dot can be driven into a bistable regime, in which either a thresholdlike enhancement or reduction of the local nuclear field by up to 3 T can be generated by varying the pumping intensity. The excitation power threshold for such a nuclear spin "switch" is found to depend on both the external magnetic and electric fields. The switch is shown to arise from the strong feedback of the nuclear spin polarization on the dynamics of the spin transfer from electrons to the nuclei of the dot.

    Original languageEnglish
    Article number026806
    JournalPhysical Review Letters
    Issue number2
    Publication statusPublished - 2007

    Research Beacons, Institutes and Platforms

    • National Graphene Institute


    Dive into the research topics of 'Nuclear spin switch in semiconductor quantum dots'. Together they form a unique fingerprint.

    Cite this