Observation of non-radiative de-excitation processes in silicon nanocrystals

A. P. Knights; J. N. Milgram; J. Wojcik; P. Mascher; I. Crowe; B. Sherliker; M. P. Halsall; R. M. Gwilliam

doi:10.1002/pssa.200881306

Observation of non-radiative de-excitation processes in silicon nanocrystals

A. P. Knights, J. N. Milgram, J. Wojcik, P. Mascher, I. Crowe, B. Sherliker, M. P. Halsall, R. M. Gwilliam

Research output: Contribution to journal › Article › peer-review

Abstract

We describe the impact of non-radiative de-excitation mechanisms on the optical emission from silicon nanocrystals formed in SiO 2. Auger excitation via free carriers deliberately introduced through phosphorus ion implantation, shows a monotonic increase with increasing phosphorus concentration which can be modelled adequately using a simple statistical approach. We also report a reduction in nanocrystal luminescence intensity with increasing exposure to UV radiation and suggest this phenomenon results from the introduction of non-radiative defects in the Si/Si02 network. The effect of UV radiation varies significantly depending on the sample preparation. © 2009 WILEY-VCH Verlag GmbH & Co, KGaA.

Original language	English
Pages (from-to)	969-972
Number of pages	3
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	206
Issue number	5
DOIs	https://doi.org/10.1002/pssa.200881306
Publication status	Published - May 2009

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title = "Observation of non-radiative de-excitation processes in silicon nanocrystals",

abstract = "We describe the impact of non-radiative de-excitation mechanisms on the optical emission from silicon nanocrystals formed in SiO 2. Auger excitation via free carriers deliberately introduced through phosphorus ion implantation, shows a monotonic increase with increasing phosphorus concentration which can be modelled adequately using a simple statistical approach. We also report a reduction in nanocrystal luminescence intensity with increasing exposure to UV radiation and suggest this phenomenon results from the introduction of non-radiative defects in the Si/Si02 network. The effect of UV radiation varies significantly depending on the sample preparation. {\textcopyright} 2009 WILEY-VCH Verlag GmbH & Co, KGaA.",

author = "Knights, {A. P.} and Milgram, {J. N.} and J. Wojcik and P. Mascher and I. Crowe and B. Sherliker and Halsall, {M. P.} and Gwilliam, {R. M.}",

year = "2009",

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T1 - Observation of non-radiative de-excitation processes in silicon nanocrystals

AU - Knights, A. P.

AU - Milgram, J. N.

AU - Wojcik, J.

AU - Mascher, P.

AU - Crowe, I.

AU - Sherliker, B.

AU - Halsall, M. P.

AU - Gwilliam, R. M.

PY - 2009/5

Y1 - 2009/5

N2 - We describe the impact of non-radiative de-excitation mechanisms on the optical emission from silicon nanocrystals formed in SiO 2. Auger excitation via free carriers deliberately introduced through phosphorus ion implantation, shows a monotonic increase with increasing phosphorus concentration which can be modelled adequately using a simple statistical approach. We also report a reduction in nanocrystal luminescence intensity with increasing exposure to UV radiation and suggest this phenomenon results from the introduction of non-radiative defects in the Si/Si02 network. The effect of UV radiation varies significantly depending on the sample preparation. © 2009 WILEY-VCH Verlag GmbH & Co, KGaA.

AB - We describe the impact of non-radiative de-excitation mechanisms on the optical emission from silicon nanocrystals formed in SiO 2. Auger excitation via free carriers deliberately introduced through phosphorus ion implantation, shows a monotonic increase with increasing phosphorus concentration which can be modelled adequately using a simple statistical approach. We also report a reduction in nanocrystal luminescence intensity with increasing exposure to UV radiation and suggest this phenomenon results from the introduction of non-radiative defects in the Si/Si02 network. The effect of UV radiation varies significantly depending on the sample preparation. © 2009 WILEY-VCH Verlag GmbH & Co, KGaA.

U2 - 10.1002/pssa.200881306

DO - 10.1002/pssa.200881306

M3 - Article

SN - 1862-6300

VL - 206

SP - 969

EP - 972

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 5

ER -

Observation of non-radiative de-excitation processes in silicon nanocrystals

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