On resonant oscillations in current-voltage characteristics of double-barrier heterostructures

V. I. Fal'ko, S. V. Meshkov

    Research output: Contribution to journalArticlepeer-review

    Abstract

    A non-quantum interference mechanism in the current-voltage characteristics of double-barrier semiconductor heterostructures is suggested. It is based on the admixing of independent contributions of channels corresponding to different values of the electron momentum along the plane of device. The disturbing of coherence of channels due to non-parabolicity of the conduction band and magnetic field parallel to the plane causes a modulation of amplitude of resonant oscillations (looking like beats) in devices with wide interbarrier space. In the simplest cases the amplitude of oscillations depends on the voltage drop V and magnetic field H as sin(V32/)/V3/2 and J1(H)/H respectively. The authors consideration gives an interpretation of the experiments in a parallel magnetic field.

    Original languageEnglish
    Article number010
    Pages (from-to)196-200
    Number of pages5
    JournalSemiconductor Science and Technology
    Volume6
    Issue number3
    DOIs
    Publication statusPublished - 1991

    Research Beacons, Institutes and Platforms

    • National Graphene Institute

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