On the diffusion behaviour of Os in the binary Ni-Os system

Y. M. Youssef; P. D. Lee; K. C. Mills; R. C. Reed

doi:10.1179/026708310X12701095964720

On the diffusion behaviour of Os in the binary Ni-Os system

Y. M. Youssef, P. D. Lee, K. C. Mills, R. C. Reed

Research output: Contribution to journal › Article › peer-review

Abstract

The diffusion of Os in Ni is characterised by measuring interdiffusion coefficients in the binary Ni-Os system, in the temperature range 1200-1350°C. The results are compared with data for Ni-Re. Theoretical calculations indicate that Os should display a diffusion coefficient comparable with Re, among the lowest displayed by elements from the d-block transition elements. The authors' experimental findings confirm these predictions, and suggest that alloying with Os is likely to improve the high temperature properties of the nickel-based superalloys. © 2010 Institute of Materials, Minerals and Mining.

Original language	English
Pages (from-to)	1173-1176
Number of pages	3
Journal	Materials Science and Technology
Volume	26
Issue number	10
DOIs	https://doi.org/10.1179/026708310X12701095964720
Publication status	Published - 1 Oct 2010

Keywords

Diffusion
High temperature properties
Microstructural kinetics
Nickel-based superalloys

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10.1179/026708310X12701095964720

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title = "On the diffusion behaviour of Os in the binary Ni-Os system",

abstract = "The diffusion of Os in Ni is characterised by measuring interdiffusion coefficients in the binary Ni-Os system, in the temperature range 1200-1350°C. The results are compared with data for Ni-Re. Theoretical calculations indicate that Os should display a diffusion coefficient comparable with Re, among the lowest displayed by elements from the d-block transition elements. The authors' experimental findings confirm these predictions, and suggest that alloying with Os is likely to improve the high temperature properties of the nickel-based superalloys. {\textcopyright} 2010 Institute of Materials, Minerals and Mining.",

keywords = "Diffusion, High temperature properties, Microstructural kinetics, Nickel-based superalloys",

author = "Youssef, {Y. M.} and Lee, {P. D.} and Mills, {K. C.} and Reed, {R. C.}",

year = "2010",

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doi = "10.1179/026708310X12701095964720",

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TY - JOUR

T1 - On the diffusion behaviour of Os in the binary Ni-Os system

AU - Youssef, Y. M.

AU - Lee, P. D.

AU - Mills, K. C.

AU - Reed, R. C.

PY - 2010/10/1

Y1 - 2010/10/1

N2 - The diffusion of Os in Ni is characterised by measuring interdiffusion coefficients in the binary Ni-Os system, in the temperature range 1200-1350°C. The results are compared with data for Ni-Re. Theoretical calculations indicate that Os should display a diffusion coefficient comparable with Re, among the lowest displayed by elements from the d-block transition elements. The authors' experimental findings confirm these predictions, and suggest that alloying with Os is likely to improve the high temperature properties of the nickel-based superalloys. © 2010 Institute of Materials, Minerals and Mining.

AB - The diffusion of Os in Ni is characterised by measuring interdiffusion coefficients in the binary Ni-Os system, in the temperature range 1200-1350°C. The results are compared with data for Ni-Re. Theoretical calculations indicate that Os should display a diffusion coefficient comparable with Re, among the lowest displayed by elements from the d-block transition elements. The authors' experimental findings confirm these predictions, and suggest that alloying with Os is likely to improve the high temperature properties of the nickel-based superalloys. © 2010 Institute of Materials, Minerals and Mining.

KW - Diffusion

KW - High temperature properties

KW - Microstructural kinetics

KW - Nickel-based superalloys

U2 - 10.1179/026708310X12701095964720

DO - 10.1179/026708310X12701095964720

M3 - Article

SN - 1743-2847

VL - 26

SP - 1173

EP - 1176

JO - Materials Science and Technology

JF - Materials Science and Technology

IS - 10

ER -

On the diffusion behaviour of Os in the binary Ni-Os system

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Keywords

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