On the resonant tunneling through double-barrier structures in a tilted magnetic field

Vladimir I. Fal'ko

doi:10.1016/0038-1098(91)90208-D

On the resonant tunneling through double-barrier structures in a tilted magnetic field

Vladimir I. Fal'ko^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The influence of a tilted magnetic field on the resonant structure of current-voltage (I-V) characteristics of layered semiconductor systems is analyzed both for the cases of weak and strong magnetic field. The Hall current and a current caused by tunneling assisted shift of cyclotron orbit center are also discussed.

Original language	English
Pages (from-to)	925-929
Number of pages	5
Journal	Solid State Communications
Volume	78
Issue number	11
DOIs	https://doi.org/10.1016/0038-1098(91)90208-D
Publication status	Published - 1991

Research Beacons, Institutes and Platforms

National Graphene Institute

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10.1016/0038-1098(91)90208-D

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@article{0e9e5ae4c2dc4af49ea6fec8cbcbe6d6,

title = "On the resonant tunneling through double-barrier structures in a tilted magnetic field",

abstract = "The influence of a tilted magnetic field on the resonant structure of current-voltage (I-V) characteristics of layered semiconductor systems is analyzed both for the cases of weak and strong magnetic field. The Hall current and a current caused by tunneling assisted shift of cyclotron orbit center are also discussed.",

author = "Fal'ko, {Vladimir I.}",

year = "1991",

doi = "10.1016/0038-1098(91)90208-D",

language = "English",

volume = "78",

pages = "925--929",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier BV",

number = "11",

}

TY - JOUR

T1 - On the resonant tunneling through double-barrier structures in a tilted magnetic field

AU - Fal'ko, Vladimir I.

PY - 1991

Y1 - 1991

N2 - The influence of a tilted magnetic field on the resonant structure of current-voltage (I-V) characteristics of layered semiconductor systems is analyzed both for the cases of weak and strong magnetic field. The Hall current and a current caused by tunneling assisted shift of cyclotron orbit center are also discussed.

AB - The influence of a tilted magnetic field on the resonant structure of current-voltage (I-V) characteristics of layered semiconductor systems is analyzed both for the cases of weak and strong magnetic field. The Hall current and a current caused by tunneling assisted shift of cyclotron orbit center are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0026171935&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(91)90208-D

DO - 10.1016/0038-1098(91)90208-D

M3 - Article

AN - SCOPUS:0026171935

SN - 0038-1098

VL - 78

SP - 925

EP - 929

JO - Solid State Communications

JF - Solid State Communications

IS - 11

ER -

On the resonant tunneling through double-barrier structures in a tilted magnetic field

Abstract

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