One-Volt IGZO Thin-Film Transistors with Ultra-Thin, Solution-Processed AlxOy Gate Dielectric

Wensi Cai; Seonghyun Park; Jiawei Zhang; Joshua Wilson; Yunpeng Li; Qian Xin; Leszek Majewski; Aimin Song

doi:10.1109/LED.2018.2798061

One-Volt IGZO Thin-Film Transistors with Ultra-Thin, Solution-Processed Al_xO_y Gate Dielectric

Wensi Cai, Seonghyun Park, Jiawei Zhang, Joshua Wilson, Yunpeng Li, Qian Xin, Leszek Majewski, Aimin Song

Research output: Contribution to journal › Article › peer-review

Abstract

Indium-gallium-zinc-oxide thin-film transistors (TFTs) with solution-processed, high-capacitance AlxOy gate dielectrics have been fabricated at room temperature. The morphology and electrical properties of the anodized, ultra-thin AlxOy film have been studied. Several anodization voltages were used to create the gate dielectrics and the results showed that the TFTs gated with aluminum oxide anodized at 2.3 V (~3 nm) exhibited the best performance. The TFTs operate at an ultra-low voltage of 1 V with a high current on/off ratio >105 and a subthreshold swing (SS) as low as 68 mV/dec, which is very close to the theoretical limit of SS at 300 K. As a result, the presented devices possess a great potential for low-power electronics

Original language	English
Pages (from-to)	375 - 378
Journal	IEEE Electron Device Letters
Volume	39
Issue number	3
Early online date	25 Jan 2018
DOIs	https://doi.org/10.1109/LED.2018.2798061
Publication status	Published - Mar 2018

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10.1109/LED.2018.2798061

Nano-rectennas for heat-to-electricity conversion. Graphene
Song, A. (PI) & Hill, E. (CoI)
1/04/16 → 7/08/19
Project: Research

Cite this

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title = "One-Volt IGZO Thin-Film Transistors with Ultra-Thin, Solution-Processed AlxOy Gate Dielectric",

abstract = "Indium-gallium-zinc-oxide thin-film transistors (TFTs) with solution-processed, high-capacitance AlxOy gate dielectrics have been fabricated at room temperature. The morphology and electrical properties of the anodized, ultra-thin AlxOy film have been studied. Several anodization voltages were used to create the gate dielectrics and the results showed that the TFTs gated with aluminum oxide anodized at 2.3 V (~3 nm) exhibited the best performance. The TFTs operate at an ultra-low voltage of 1 V with a high current on/off ratio >105 and a subthreshold swing (SS) as low as 68 mV/dec, which is very close to the theoretical limit of SS at 300 K. As a result, the presented devices possess a great potential for low-power electronics",

author = "Wensi Cai and Seonghyun Park and Jiawei Zhang and Joshua Wilson and Yunpeng Li and {Qian Xin} and Leszek Majewski and Aimin Song",

year = "2018",

month = mar,

doi = "10.1109/LED.2018.2798061",

language = "English",

volume = "39",

pages = " 375 -- 378",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE",

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TY - JOUR

T1 - One-Volt IGZO Thin-Film Transistors with Ultra-Thin, Solution-Processed AlxOy Gate Dielectric

AU - Cai, Wensi

AU - Park, Seonghyun

AU - Zhang, Jiawei

AU - Wilson, Joshua

AU - Li, Yunpeng

AU - Qian Xin,

AU - Majewski, Leszek

AU - Song, Aimin

PY - 2018/3

Y1 - 2018/3

N2 - Indium-gallium-zinc-oxide thin-film transistors (TFTs) with solution-processed, high-capacitance AlxOy gate dielectrics have been fabricated at room temperature. The morphology and electrical properties of the anodized, ultra-thin AlxOy film have been studied. Several anodization voltages were used to create the gate dielectrics and the results showed that the TFTs gated with aluminum oxide anodized at 2.3 V (~3 nm) exhibited the best performance. The TFTs operate at an ultra-low voltage of 1 V with a high current on/off ratio >105 and a subthreshold swing (SS) as low as 68 mV/dec, which is very close to the theoretical limit of SS at 300 K. As a result, the presented devices possess a great potential for low-power electronics

AB - Indium-gallium-zinc-oxide thin-film transistors (TFTs) with solution-processed, high-capacitance AlxOy gate dielectrics have been fabricated at room temperature. The morphology and electrical properties of the anodized, ultra-thin AlxOy film have been studied. Several anodization voltages were used to create the gate dielectrics and the results showed that the TFTs gated with aluminum oxide anodized at 2.3 V (~3 nm) exhibited the best performance. The TFTs operate at an ultra-low voltage of 1 V with a high current on/off ratio >105 and a subthreshold swing (SS) as low as 68 mV/dec, which is very close to the theoretical limit of SS at 300 K. As a result, the presented devices possess a great potential for low-power electronics

U2 - 10.1109/LED.2018.2798061

DO - 10.1109/LED.2018.2798061

M3 - Article

SN - 0741-3106

VL - 39

SP - 375

EP - 378

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

One-Volt IGZO Thin-Film Transistors with Ultra-Thin, Solution-Processed AlxOy Gate Dielectric

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Nano-rectennas for heat-to-electricity conversion. Graphene

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One-Volt IGZO Thin-Film Transistors with Ultra-Thin, Solution-Processed Al_xO_y Gate Dielectric