One-Volt IGZO Thin-Film Transistors with Ultra-Thin, Solution-Processed AlxOy Gate Dielectric

Wensi Cai, Seonghyun Park, Jiawei Zhang, Joshua Wilson, Yunpeng Li, Qian Xin, Leszek Majewski, Aimin Song

    Research output: Contribution to journalArticlepeer-review


    Indium-gallium-zinc-oxide thin-film transistors (TFTs) with solution-processed, high-capacitance AlxOy gate dielectrics have been fabricated at room temperature. The morphology and electrical properties of the anodized, ultra-thin AlxOy film have been studied. Several anodization voltages were used to create the gate dielectrics and the results showed that the TFTs gated with aluminum oxide anodized at 2.3 V (~3 nm) exhibited the best performance. The TFTs operate at an ultra-low voltage of 1 V with a high current on/off ratio >105 and a subthreshold swing (SS) as low as 68 mV/dec, which is very close to the theoretical limit of SS at 300 K. As a result, the presented devices possess a great potential for low-power electronics
    Original languageEnglish
    Pages (from-to) 375 - 378
    JournalIEEE Electron Device Letters
    Issue number3
    Early online date25 Jan 2018
    Publication statusPublished - Mar 2018


    Dive into the research topics of 'One-Volt IGZO Thin-Film Transistors with Ultra-Thin, Solution-Processed AlxOy Gate Dielectric'. Together they form a unique fingerprint.

    Cite this