Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2

Z. Yang, K. P. Homewood, M. S. Finney, M. A. Harry, K. J. Reeson

Research output: Contribution to journalArticlepeer-review

Abstract

Through transmission measurements, an investigation of the fundamental absorption and the absorption below the fundamental edge in the ion beam synthesis (IBS) polycrystalline β-FeSi2 layer on the Si(001) substrate. Photon energy dependence of the absorption coefficient in the high absorption region demonstrates a minimum direct band gap of approx.0.847 eV at room temperature and approx.0.904 eV at 10 K. The variation of the direct band gap with measurement temperature was studied using a three-parameter thermodynamic model and the Einstein model, giving results which are in reasonably in good agreement.

Original languageEnglish
Pages (from-to)1958-1963
Number of pages6
JournalJournal of Applied Physics
Volume78
Issue number3
DOIs
Publication statusPublished - 1 Aug 1995

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