Optical and electrical properties of In.48(AlxGa(1-x)).52P grown by solid source MBE using a GaP decomposition source

Research output: Contribution to conferencePaperpeer-review

Abstract

The use of GaP as a source material for the generation of P2 is shown to lead to the growth of a wide range of phosphide materials with excellent optical and electrical qualities. The compatibility of this source with conventional Solid Source Molecular Beam epitaxy system is demonstrated through the continuous use of this cell for over 5 years with no safety or materials issues arising. The application of this cell to the growth of state of the art optoelectronics and microwave devices is illustrated.

Original languageEnglish
Pages1-8
Number of pages8
Publication statusPublished - 1 Dec 2001
Event2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications - Vienna, Austria
Duration: 15 Nov 200116 Nov 2001

Conference

Conference2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications
Country/TerritoryAustria
CityVienna
Period15/11/0116/11/01

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