Optical and electronic properties of bismuth-implanted glasses

M. A. Hughes; Y. Federenko; T. H. Lee; J. Yao; Behrad Gholipour; R. M. Gwilliam; Kevin P. Homewood; Daniel W. Hewak; S. R. Elliott; R. J. Curry

doi:10.1117/12.2036933

Optical and electronic properties of bismuth-implanted glasses

M. A. Hughes, Y. Federenko, T. H. Lee, J. Yao, Behrad Gholipour, R. M. Gwilliam, Kevin P. Homewood, Daniel W. Hewak, S. R. Elliott, R. J. Curry

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

Photoluminescence (PL) and excitation spectra of Bi melt-doped oxide and chalcogenide glasses are very similar, indicating the same Bi center is present. When implanted with Bi, chalcogenide, phosphate and silica glasses, and BaF₂ crystals, all display characteristically different PL spectra to when Bi is incorporated by melt-doping. This indicates that ion implantation is able to generate Bi centers which are not present in samples whose dopants are introduced during melting. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi²⁺ and Bi clusters.

Original language	English
Title of host publication	Optical Components and Materials XI
Publisher	SPIE
Volume	8982
ISBN (Print)	9780819498953
DOIs	https://doi.org/10.1117/12.2036933
Publication status	Published - 2014
Event	Optical Components and Materials XI - San Francisco, CA, United States Duration: 3 Feb 2014 → 5 Feb 2014

Conference

Conference	Optical Components and Materials XI
Country/Territory	United States
City	San Francisco, CA
Period	3/02/14 → 5/02/14

Keywords

Bismuth
Chalcogenide
Implantation
Photoluminescence

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10.1117/12.2036933

Cite this

@inproceedings{f7322c2140c04dfd99f7eecf1dea74b0,

title = "Optical and electronic properties of bismuth-implanted glasses",

abstract = "Photoluminescence (PL) and excitation spectra of Bi melt-doped oxide and chalcogenide glasses are very similar, indicating the same Bi center is present. When implanted with Bi, chalcogenide, phosphate and silica glasses, and BaF2 crystals, all display characteristically different PL spectra to when Bi is incorporated by melt-doping. This indicates that ion implantation is able to generate Bi centers which are not present in samples whose dopants are introduced during melting. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi2+ and Bi clusters.",

keywords = "Bismuth, Chalcogenide, Implantation, Photoluminescence",

author = "Hughes, {M. A.} and Y. Federenko and Lee, {T. H.} and J. Yao and Behrad Gholipour and Gwilliam, {R. M.} and Homewood, {Kevin P.} and Hewak, {Daniel W.} and Elliott, {S. R.} and Curry, {R. J.}",

year = "2014",

doi = "10.1117/12.2036933",

language = "English",

isbn = "9780819498953",

volume = "8982",

booktitle = "Optical Components and Materials XI",

publisher = "SPIE",

address = "United States",

note = "Optical Components and Materials XI ; Conference date: 03-02-2014 Through 05-02-2014",

}

TY - GEN

T1 - Optical and electronic properties of bismuth-implanted glasses

AU - Hughes, M. A.

AU - Federenko, Y.

AU - Lee, T. H.

AU - Yao, J.

AU - Gholipour, Behrad

AU - Gwilliam, R. M.

AU - Homewood, Kevin P.

AU - Hewak, Daniel W.

AU - Elliott, S. R.

AU - Curry, R. J.

PY - 2014

Y1 - 2014

N2 - Photoluminescence (PL) and excitation spectra of Bi melt-doped oxide and chalcogenide glasses are very similar, indicating the same Bi center is present. When implanted with Bi, chalcogenide, phosphate and silica glasses, and BaF2 crystals, all display characteristically different PL spectra to when Bi is incorporated by melt-doping. This indicates that ion implantation is able to generate Bi centers which are not present in samples whose dopants are introduced during melting. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi2+ and Bi clusters.

AB - Photoluminescence (PL) and excitation spectra of Bi melt-doped oxide and chalcogenide glasses are very similar, indicating the same Bi center is present. When implanted with Bi, chalcogenide, phosphate and silica glasses, and BaF2 crystals, all display characteristically different PL spectra to when Bi is incorporated by melt-doping. This indicates that ion implantation is able to generate Bi centers which are not present in samples whose dopants are introduced during melting. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi2+ and Bi clusters.

KW - Bismuth

KW - Chalcogenide

KW - Implantation

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=84901009051&partnerID=8YFLogxK

U2 - 10.1117/12.2036933

DO - 10.1117/12.2036933

M3 - Conference contribution

AN - SCOPUS:84901009051

SN - 9780819498953

VL - 8982

BT - Optical Components and Materials XI

PB - SPIE

T2 - Optical Components and Materials XI

Y2 - 3 February 2014 through 5 February 2014

ER -

Optical and electronic properties of bismuth-implanted glasses

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Keywords

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