Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

D. Zhu; M. J. Kappers; C. McAleese; D. M. Graham; G. R. Chabrol; N. P. Hylton; P. Dawson; E. J. Thrush; C. J. Humphreys

doi:10.1016/j.jcrysgro.2006.10.155

Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

D. Zhu, M. J. Kappers, C. McAleese, D. M. Graham, G. R. Chabrol, N. P. Hylton, P. Dawson, E. J. Thrush, C. J. Humphreys

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

We have studied the optical properties of a series of InGaN/AlInGaN 10-period multiple quantum wells (MQW) with differing well thickness grown by metal-organic vapor-phase epitaxy that emit at around 380 nm. The aim of this investigation was to optimise the room temperature internal quantum efficiency, thus the quantum well (QW) thicknesses were accordingly chosen so that the overlap of the electron/hole wave function was maximised. At low temperature, we observed a reduction of the photoluminescence decay time with decreasing well width in line with the theoretical predictions. For a structure with well thicknesses of 1.5 nm, we measured a photoluminescence internal quantum efficiency of 67% at room temperature with a peak emission wavelength of 382 nm. © 2006 Elsevier B.V. All rights reserved.

Original language	English
Title of host publication	Journal of Crystal Growth\|J Cryst Growth
Place of Publication	Journal of Crystal Growth
Publisher	Elsevier BV
Pages	504-507
Number of pages	3
Volume	298
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.10.155
Publication status	Published - Jan 2007
Event	13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII) - Duration: 1 Jan 1824 → …

Conference

Conference	13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII)
Period	1/01/24 → …

Keywords

A1. Photoluminescence
A3. Organometallic vapor phase epitaxy
B1. Nitride

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10.1016/j.jcrysgro.2006.10.155

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Zhu, D., Kappers, M. J., McAleese, C., Graham, D. M., Chabrol, G. R., Hylton, N. P., Dawson, P., Thrush, E. J., & Humphreys, C. J. (2007). Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures. In Journal of Crystal Growth|J Cryst Growth (Vol. 298, pp. 504-507). Elsevier BV. https://doi.org/10.1016/j.jcrysgro.2006.10.155

@inproceedings{be1cad693e304486ae658463ff94f6dc,

title = "Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures",

abstract = "We have studied the optical properties of a series of InGaN/AlInGaN 10-period multiple quantum wells (MQW) with differing well thickness grown by metal-organic vapor-phase epitaxy that emit at around 380 nm. The aim of this investigation was to optimise the room temperature internal quantum efficiency, thus the quantum well (QW) thicknesses were accordingly chosen so that the overlap of the electron/hole wave function was maximised. At low temperature, we observed a reduction of the photoluminescence decay time with decreasing well width in line with the theoretical predictions. For a structure with well thicknesses of 1.5 nm, we measured a photoluminescence internal quantum efficiency of 67% at room temperature with a peak emission wavelength of 382 nm. {\textcopyright} 2006 Elsevier B.V. All rights reserved.",

keywords = "A1. Photoluminescence, A3. Organometallic vapor phase epitaxy, B1. Nitride",

author = "D. Zhu and Kappers, {M. J.} and C. McAleese and Graham, {D. M.} and Chabrol, {G. R.} and Hylton, {N. P.} and P. Dawson and Thrush, {E. J.} and Humphreys, {C. J.}",

year = "2007",

month = jan,

doi = "10.1016/j.jcrysgro.2006.10.155",

language = "English",

volume = "298",

pages = "504--507",

booktitle = "Journal of Crystal Growth|J Cryst Growth",

publisher = "Elsevier BV",

address = "Netherlands",

note = "13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII) ; Conference date: 01-01-1824",

}

Zhu, D, Kappers, MJ, McAleese, C, Graham, DM, Chabrol, GR, Hylton, NP, Dawson, P, Thrush, EJ & Humphreys, CJ 2007, Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures. in Journal of Crystal Growth|J Cryst Growth. vol. 298, Elsevier BV, Journal of Crystal Growth, pp. 504-507, 13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), 1/01/24. https://doi.org/10.1016/j.jcrysgro.2006.10.155

TY - GEN

T1 - Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

AU - Zhu, D.

AU - Kappers, M. J.

AU - McAleese, C.

AU - Graham, D. M.

AU - Chabrol, G. R.

AU - Hylton, N. P.

AU - Dawson, P.

AU - Thrush, E. J.

AU - Humphreys, C. J.

PY - 2007/1

Y1 - 2007/1

N2 - We have studied the optical properties of a series of InGaN/AlInGaN 10-period multiple quantum wells (MQW) with differing well thickness grown by metal-organic vapor-phase epitaxy that emit at around 380 nm. The aim of this investigation was to optimise the room temperature internal quantum efficiency, thus the quantum well (QW) thicknesses were accordingly chosen so that the overlap of the electron/hole wave function was maximised. At low temperature, we observed a reduction of the photoluminescence decay time with decreasing well width in line with the theoretical predictions. For a structure with well thicknesses of 1.5 nm, we measured a photoluminescence internal quantum efficiency of 67% at room temperature with a peak emission wavelength of 382 nm. © 2006 Elsevier B.V. All rights reserved.

AB - We have studied the optical properties of a series of InGaN/AlInGaN 10-period multiple quantum wells (MQW) with differing well thickness grown by metal-organic vapor-phase epitaxy that emit at around 380 nm. The aim of this investigation was to optimise the room temperature internal quantum efficiency, thus the quantum well (QW) thicknesses were accordingly chosen so that the overlap of the electron/hole wave function was maximised. At low temperature, we observed a reduction of the photoluminescence decay time with decreasing well width in line with the theoretical predictions. For a structure with well thicknesses of 1.5 nm, we measured a photoluminescence internal quantum efficiency of 67% at room temperature with a peak emission wavelength of 382 nm. © 2006 Elsevier B.V. All rights reserved.

KW - A1. Photoluminescence

KW - A3. Organometallic vapor phase epitaxy

KW - B1. Nitride

U2 - 10.1016/j.jcrysgro.2006.10.155

DO - 10.1016/j.jcrysgro.2006.10.155

M3 - Conference contribution

VL - 298

SP - 504

EP - 507

BT - Journal of Crystal Growth|J Cryst Growth

PB - Elsevier BV

CY - Journal of Crystal Growth

T2 - 13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII)

Y2 - 1 January 1824

ER -

Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

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