Optical characterization of deep states associated with oxidation-induced stacking faults in silicon

A. Castaldini; Anna Cavallini; J. H. Evans; I. D. Hawkins; A. R. Peaker; M. Vandini

doi:10.1016/0921-5107(94)90321-2

Optical characterization of deep states associated with oxidation-induced stacking faults in silicon

A. Castaldini, Anna Cavallini, J. H. Evans, I. D. Hawkins, A. R. Peaker, M. Vandini

Universita Degli Studi Bologna

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied the effect of sub-band gap radiation on the defects associated with the Frank partial dislocation (Burgers vector a/3(111)) bounding oxidation-induced stacking faults (OISF) in n-type silicon. We have observed the contrast produced using IR-beam-induced current (IRBIC) and have studied the effect of the modification of the contrast of individual dislocations with below band gap radiation by quenched IR-beam-induced current (QIRBIC). We have compared these spectra with absolute measurements of the photocapacitance cross-section of the dominant deep state associated with the Frank partials. QIRBIC spectra for "clean", gold-decorated and two levels of copper-decorated samples have been measured. A model of the recombination kinetics is discussed.

Original language	English
Pages (from-to)	170-174
Number of pages	5
Journal	Materials Science and Engineering B
Volume	24
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-5107(94)90321-2
Publication status	Published - May 1994

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title = "Optical characterization of deep states associated with oxidation-induced stacking faults in silicon",

abstract = "We have studied the effect of sub-band gap radiation on the defects associated with the Frank partial dislocation (Burgers vector a/3(111)) bounding oxidation-induced stacking faults (OISF) in n-type silicon. We have observed the contrast produced using IR-beam-induced current (IRBIC) and have studied the effect of the modification of the contrast of individual dislocations with below band gap radiation by quenched IR-beam-induced current (QIRBIC). We have compared these spectra with absolute measurements of the photocapacitance cross-section of the dominant deep state associated with the Frank partials. QIRBIC spectra for {"}clean{"}, gold-decorated and two levels of copper-decorated samples have been measured. A model of the recombination kinetics is discussed.",

author = "A. Castaldini and Anna Cavallini and Evans, {J. H.} and Hawkins, {I. D.} and Peaker, {A. R.} and M. Vandini",

note = "Funding Information: The work at Bologna was funded by the Italian MURST and that at UMIST by the UK Science and Engineering Research Council. The collaboration",

year = "1994",

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doi = "10.1016/0921-5107(94)90321-2",

language = "English",

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journal = "Materials Science and Engineering B",

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TY - JOUR

T1 - Optical characterization of deep states associated with oxidation-induced stacking faults in silicon

AU - Castaldini, A.

AU - Cavallini, Anna

AU - Evans, J. H.

AU - Hawkins, I. D.

AU - Peaker, A. R.

AU - Vandini, M.

N1 - Funding Information: The work at Bologna was funded by the Italian MURST and that at UMIST by the UK Science and Engineering Research Council. The collaboration

PY - 1994/5

Y1 - 1994/5

N2 - We have studied the effect of sub-band gap radiation on the defects associated with the Frank partial dislocation (Burgers vector a/3(111)) bounding oxidation-induced stacking faults (OISF) in n-type silicon. We have observed the contrast produced using IR-beam-induced current (IRBIC) and have studied the effect of the modification of the contrast of individual dislocations with below band gap radiation by quenched IR-beam-induced current (QIRBIC). We have compared these spectra with absolute measurements of the photocapacitance cross-section of the dominant deep state associated with the Frank partials. QIRBIC spectra for "clean", gold-decorated and two levels of copper-decorated samples have been measured. A model of the recombination kinetics is discussed.

AB - We have studied the effect of sub-band gap radiation on the defects associated with the Frank partial dislocation (Burgers vector a/3(111)) bounding oxidation-induced stacking faults (OISF) in n-type silicon. We have observed the contrast produced using IR-beam-induced current (IRBIC) and have studied the effect of the modification of the contrast of individual dislocations with below band gap radiation by quenched IR-beam-induced current (QIRBIC). We have compared these spectra with absolute measurements of the photocapacitance cross-section of the dominant deep state associated with the Frank partials. QIRBIC spectra for "clean", gold-decorated and two levels of copper-decorated samples have been measured. A model of the recombination kinetics is discussed.

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U2 - 10.1016/0921-5107(94)90321-2

DO - 10.1016/0921-5107(94)90321-2

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SN - 0921-5107

VL - 24

SP - 170

EP - 174

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1-3

ER -

Optical characterization of deep states associated with oxidation-induced stacking faults in silicon

Abstract

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