Optical characterization of deep states associated with oxidation-induced stacking faults in silicon

A. Castaldini, Anna Cavallini, J. H. Evans, I. D. Hawkins, A. R. Peaker, M. Vandini

Research output: Contribution to journalArticlepeer-review

Abstract

We have studied the effect of sub-band gap radiation on the defects associated with the Frank partial dislocation (Burgers vector a/3(111)) bounding oxidation-induced stacking faults (OISF) in n-type silicon. We have observed the contrast produced using IR-beam-induced current (IRBIC) and have studied the effect of the modification of the contrast of individual dislocations with below band gap radiation by quenched IR-beam-induced current (QIRBIC). We have compared these spectra with absolute measurements of the photocapacitance cross-section of the dominant deep state associated with the Frank partials. QIRBIC spectra for "clean", gold-decorated and two levels of copper-decorated samples have been measured. A model of the recombination kinetics is discussed.

Original languageEnglish
Pages (from-to)170-174
Number of pages5
JournalMaterials Science and Engineering B
Volume24
Issue number1-3
DOIs
Publication statusPublished - May 1994

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