Optical monitoring of InP monolayer growth rates

P. J. Parbrook, K. B. Ozanyan, M. Hopkinson, C. R. Whitehouse, Z. Sobiesierski, D. I. Westwood

    Research output: Contribution to journalArticlepeer-review


    Reflection anisotropy (RA) spectroscopy has been used to examine the in vacuo (001) surface of InP before and during growth by molecular beam epitaxy (MBE). The dominant effect on the RA signal occurring the initiation of growth is the change in the surface V/III ratio, caused by the exposure of the surface to the incident indium flux. During MBE growth of InP under commonly used conditions, RA oscillations are clearly observed. These oscillations have been confirmed to correspond to the growth of InP monolayers. The oscillations are tentatively ascribed to the variation in P coverage during the growth of each monolayer of material. © 1998 American Institute of Physics.
    Original languageEnglish
    Pages (from-to)345-347
    Number of pages2
    JournalApplied Physics Letters
    Issue number3
    Publication statusPublished - 1998


    Dive into the research topics of 'Optical monitoring of InP monolayer growth rates'. Together they form a unique fingerprint.

    Cite this