Optical monitoring of InP monolayer growth rates

P. J. Parbrook; K. B. Ozanyan; M. Hopkinson; C. R. Whitehouse; Z. Sobiesierski; D. I. Westwood

doi:10.1063/1.121829

Optical monitoring of InP monolayer growth rates

P. J. Parbrook, K. B. Ozanyan, M. Hopkinson, C. R. Whitehouse, Z. Sobiesierski, D. I. Westwood

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Abstract

Reflection anisotropy (RA) spectroscopy has been used to examine the in vacuo (001) surface of InP before and during growth by molecular beam epitaxy (MBE). The dominant effect on the RA signal occurring the initiation of growth is the change in the surface V/III ratio, caused by the exposure of the surface to the incident indium flux. During MBE growth of InP under commonly used conditions, RA oscillations are clearly observed. These oscillations have been confirmed to correspond to the growth of InP monolayers. The oscillations are tentatively ascribed to the variation in P coverage during the growth of each monolayer of material. © 1998 American Institute of Physics.

Original language	English
Pages (from-to)	345-347
Number of pages	2
Journal	Applied Physics Letters
Volume	73
Issue number	3
DOIs	https://doi.org/10.1063/1.121829
Publication status	Published - 1998

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title = "Optical monitoring of InP monolayer growth rates",

abstract = "Reflection anisotropy (RA) spectroscopy has been used to examine the in vacuo (001) surface of InP before and during growth by molecular beam epitaxy (MBE). The dominant effect on the RA signal occurring the initiation of growth is the change in the surface V/III ratio, caused by the exposure of the surface to the incident indium flux. During MBE growth of InP under commonly used conditions, RA oscillations are clearly observed. These oscillations have been confirmed to correspond to the growth of InP monolayers. The oscillations are tentatively ascribed to the variation in P coverage during the growth of each monolayer of material. {\textcopyright} 1998 American Institute of Physics.",

author = "Parbrook, {P. J.} and Ozanyan, {K. B.} and M. Hopkinson and Whitehouse, {C. R.} and Z. Sobiesierski and Westwood, {D. I.}",

year = "1998",

doi = "10.1063/1.121829",

language = "English",

volume = "73",

pages = "345--347",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Optical monitoring of InP monolayer growth rates

AU - Parbrook, P. J.

AU - Ozanyan, K. B.

AU - Hopkinson, M.

AU - Whitehouse, C. R.

AU - Sobiesierski, Z.

AU - Westwood, D. I.

PY - 1998

Y1 - 1998

N2 - Reflection anisotropy (RA) spectroscopy has been used to examine the in vacuo (001) surface of InP before and during growth by molecular beam epitaxy (MBE). The dominant effect on the RA signal occurring the initiation of growth is the change in the surface V/III ratio, caused by the exposure of the surface to the incident indium flux. During MBE growth of InP under commonly used conditions, RA oscillations are clearly observed. These oscillations have been confirmed to correspond to the growth of InP monolayers. The oscillations are tentatively ascribed to the variation in P coverage during the growth of each monolayer of material. © 1998 American Institute of Physics.

AB - Reflection anisotropy (RA) spectroscopy has been used to examine the in vacuo (001) surface of InP before and during growth by molecular beam epitaxy (MBE). The dominant effect on the RA signal occurring the initiation of growth is the change in the surface V/III ratio, caused by the exposure of the surface to the incident indium flux. During MBE growth of InP under commonly used conditions, RA oscillations are clearly observed. These oscillations have been confirmed to correspond to the growth of InP monolayers. The oscillations are tentatively ascribed to the variation in P coverage during the growth of each monolayer of material. © 1998 American Institute of Physics.

U2 - 10.1063/1.121829

DO - 10.1063/1.121829

M3 - Article

SN - 0003-6951

VL - 73

SP - 345

EP - 347

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Optical monitoring of InP monolayer growth rates

Abstract

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