Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals

E. A. Tolkacheva, V. P. Markevich, L. I. Murin

    Research output: Contribution to journalArticlepeer-review

    Abstract

    The processes of the formation and annealing of VnOm (n, m ≥ 2) vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm–1 as being related to local vibrational modes of V2O2 and V3O2 complexes, respectively.
    Original languageEnglish
    Pages (from-to)1097-1103
    Number of pages6
    JournalSemiconductors
    Volume52
    Issue number9
    Early online date22 Aug 2018
    DOIs
    Publication statusPublished - Sept 2018

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