Optical properties of dislocations in silicon crystals

Yu G. Shreter; Yu T. Rebane; A. R. Peaker

doi:10.1002/pssa.2211380239

Optical properties of dislocations in silicon crystals

Yu G. Shreter^*
, Yu T. Rebane
, A. R. Peaker

^*Corresponding author for this work

EEE - Academic & Research

A.F. Ioffe Physico-Technical Institute

Research output: Contribution to journal › Article › peer-review

Abstract

New dislocation‐related photoluminescence (PL) data associated with various types of extended defects in Si are considered. It is found that the D6 line in n‐Si epitaxial layers is actually a doublet consisting of two lines separated by 2 meV. The D2 line strongly correlates with the presence of Frank dislocation loops in the crystals. The luminescence lines D1, D2 and the band associated with rod‐like defects are quenched by a magnetic field, the lines D4, D3 are not. The magneto‐quenching effect is interpreted in terms of the kinetics of carrier capture by extended defects.

Original language	English
Pages (from-to)	681-686
Number of pages	6
Journal	physica status solidi (a)
Volume	138
Issue number	2
DOIs	https://doi.org/10.1002/pssa.2211380239
Publication status	Published - 16 Aug 1993

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title = "Optical properties of dislocations in silicon crystals",

abstract = "New dislocation‐related photoluminescence (PL) data associated with various types of extended defects in Si are considered. It is found that the D6 line in n‐Si epitaxial layers is actually a doublet consisting of two lines separated by 2 meV. The D2 line strongly correlates with the presence of Frank dislocation loops in the crystals. The luminescence lines D1, D2 and the band associated with rod‐like defects are quenched by a magnetic field, the lines D4, D3 are not. The magneto‐quenching effect is interpreted in terms of the kinetics of carrier capture by extended defects.",

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T1 - Optical properties of dislocations in silicon crystals

AU - Shreter, Yu G.

AU - Rebane, Yu T.

AU - Peaker, A. R.

PY - 1993/8/16

Y1 - 1993/8/16

N2 - New dislocation‐related photoluminescence (PL) data associated with various types of extended defects in Si are considered. It is found that the D6 line in n‐Si epitaxial layers is actually a doublet consisting of two lines separated by 2 meV. The D2 line strongly correlates with the presence of Frank dislocation loops in the crystals. The luminescence lines D1, D2 and the band associated with rod‐like defects are quenched by a magnetic field, the lines D4, D3 are not. The magneto‐quenching effect is interpreted in terms of the kinetics of carrier capture by extended defects.

AB - New dislocation‐related photoluminescence (PL) data associated with various types of extended defects in Si are considered. It is found that the D6 line in n‐Si epitaxial layers is actually a doublet consisting of two lines separated by 2 meV. The D2 line strongly correlates with the presence of Frank dislocation loops in the crystals. The luminescence lines D1, D2 and the band associated with rod‐like defects are quenched by a magnetic field, the lines D4, D3 are not. The magneto‐quenching effect is interpreted in terms of the kinetics of carrier capture by extended defects.

UR - https://www.scopus.com/pages/publications/22944448590

U2 - 10.1002/pssa.2211380239

DO - 10.1002/pssa.2211380239

M3 - Article

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SP - 681

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JO - physica status solidi (a)

JF - physica status solidi (a)

IS - 2

ER -

Optical properties of dislocations in silicon crystals

Abstract

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