Abstract
We have investigated the local atomic environment of the Ga atoms in an InxGa1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15. © 2007 American Institute of Physics.
Original language | English |
---|---|
Title of host publication | AIP Conference Proceedings|AIP Conf. Proc. |
Place of Publication | AIP Conference Proceedings |
Publisher | American Institute of Physics |
Pages | 1503-1504 |
Number of pages | 1 |
Volume | 893 |
ISBN (Print) | 9780735403970 |
DOIs | |
Publication status | Published - 2007 |
Event | 28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna Duration: 1 Jul 2007 → … |
Conference
Conference | 28th International Conference on the Physics of Semiconductors, ICPS 2006 |
---|---|
City | Vienna |
Period | 1/07/07 → … |
Keywords
- EXAFS
- InGaN
- Quantum well