Optically detected extended X-ray absorption fine structure study of InGaN/GaN single quantum wells

N. Rigopoulos, B. Hamilton, G. J. Davies, B. M. Towlson, N. R J Poolton, P. Dawson, D. M. Graham, M. J. Kappers, C. J. Humphreys, S. Carlson

    Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

    Abstract

    We have investigated the local atomic environment of the Ga atoms in an InxGa1-xN single quantum well structure using Optically Detected Extended X-ray Absorption Fine Structure (OD-EXAFS). A comparison of the OD-EXAFS data with a theoretical model shows the technique to be site selective for this particular structure and reveals that the quantum well emission originates from regions with x=0.15. © 2007 American Institute of Physics.
    Original languageEnglish
    Title of host publicationAIP Conference Proceedings|AIP Conf. Proc.
    Place of PublicationAIP Conference Proceedings
    PublisherAmerican Institute of Physics
    Pages1503-1504
    Number of pages1
    Volume893
    ISBN (Print)9780735403970
    DOIs
    Publication statusPublished - 2007
    Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna
    Duration: 1 Jul 2007 → …

    Conference

    Conference28th International Conference on the Physics of Semiconductors, ICPS 2006
    CityVienna
    Period1/07/07 → …

    Keywords

    • EXAFS
    • InGaN
    • Quantum well

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