Optically pumped stimulated emission in ZnS/ZnCdS multiple quantum-wells, MBE-grown on GaP

K. B. Ozanyan; J. E. Nicholls; L. May; J. H C Hogg; W. E. Hagston; B. Lunn; D. E. Ashenford

doi:10.1016/0038-1098(96)00265-7

Optically pumped stimulated emission in ZnS/ZnCdS multiple quantum-wells, MBE-grown on GaP

K. B. Ozanyan
, J. E. Nicholls
, L. May
, J. H C Hogg
, W. E. Hagston
, B. Lunn
, D. E. Ashenford

Research output: Contribution to journal › Article › peer-review

Abstract

Optically pumped stimulated emission is observed in a series of ZnS/Znl-xCdxS multiple quantum-well (MQW) structures, grown on GaP substrates by MBE. We report lasing from a ZnS/Zn0.97Cd0.03S MQW at wavelengths as low as 333nm, the shortest yet reported in a semiconductor heterostructure. The lasing threshold decreases for deeper wells and reaches 6.5 kW.cm-2 at 8K and 80 kW.cm-2 at 300K for the MWQs with a Cd-composition of 0.2. The results are compared to known values for similar structures grown on GaAs by MOCVD, which reveals the potential of the GaP-substrate MBE technology for the widest bandgap II-VI heterostructures incorporating ZnS-based ternary alloys. Copyright © 1996 Elsevier Science Ltd.

Original language	English
Pages (from-to)	407-411
Number of pages	4
Journal	Solid State Communications
Volume	99
Issue number	6
DOIs	https://doi.org/10.1016/0038-1098(96)00265-7
Publication status	Published - Aug 1996

Keywords

A. Quantum wells
A. Semiconductors
B. Epitaxy
D. Optical properties
E. Luminescence

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10.1016/0038-1098(96)00265-7

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@article{b2f42c887b1c4e1fb8f4345380f55af9,

title = "Optically pumped stimulated emission in ZnS/ZnCdS multiple quantum-wells, MBE-grown on GaP",

abstract = "Optically pumped stimulated emission is observed in a series of ZnS/Znl-xCdxS multiple quantum-well (MQW) structures, grown on GaP substrates by MBE. We report lasing from a ZnS/Zn0.97Cd0.03S MQW at wavelengths as low as 333nm, the shortest yet reported in a semiconductor heterostructure. The lasing threshold decreases for deeper wells and reaches 6.5 kW.cm-2 at 8K and 80 kW.cm-2 at 300K for the MWQs with a Cd-composition of 0.2. The results are compared to known values for similar structures grown on GaAs by MOCVD, which reveals the potential of the GaP-substrate MBE technology for the widest bandgap II-VI heterostructures incorporating ZnS-based ternary alloys. Copyright {\textcopyright} 1996 Elsevier Science Ltd.",

keywords = "A. Quantum wells, A. Semiconductors, B. Epitaxy, D. Optical properties, E. Luminescence",

author = "Ozanyan, \{K. B.\} and Nicholls, \{J. E.\} and L. May and Hogg, \{J. H C\} and Hagston, \{W. E.\} and B. Lunn and Ashenford, \{D. E.\}",

year = "1996",

month = aug,

doi = "10.1016/0038-1098(96)00265-7",

language = "English",

volume = "99",

pages = "407--411",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier BV",

number = "6",

}

TY - JOUR

T1 - Optically pumped stimulated emission in ZnS/ZnCdS multiple quantum-wells, MBE-grown on GaP

AU - Ozanyan, K. B.

AU - Nicholls, J. E.

AU - May, L.

AU - Hogg, J. H C

AU - Hagston, W. E.

AU - Lunn, B.

AU - Ashenford, D. E.

PY - 1996/8

Y1 - 1996/8

N2 - Optically pumped stimulated emission is observed in a series of ZnS/Znl-xCdxS multiple quantum-well (MQW) structures, grown on GaP substrates by MBE. We report lasing from a ZnS/Zn0.97Cd0.03S MQW at wavelengths as low as 333nm, the shortest yet reported in a semiconductor heterostructure. The lasing threshold decreases for deeper wells and reaches 6.5 kW.cm-2 at 8K and 80 kW.cm-2 at 300K for the MWQs with a Cd-composition of 0.2. The results are compared to known values for similar structures grown on GaAs by MOCVD, which reveals the potential of the GaP-substrate MBE technology for the widest bandgap II-VI heterostructures incorporating ZnS-based ternary alloys. Copyright © 1996 Elsevier Science Ltd.

AB - Optically pumped stimulated emission is observed in a series of ZnS/Znl-xCdxS multiple quantum-well (MQW) structures, grown on GaP substrates by MBE. We report lasing from a ZnS/Zn0.97Cd0.03S MQW at wavelengths as low as 333nm, the shortest yet reported in a semiconductor heterostructure. The lasing threshold decreases for deeper wells and reaches 6.5 kW.cm-2 at 8K and 80 kW.cm-2 at 300K for the MWQs with a Cd-composition of 0.2. The results are compared to known values for similar structures grown on GaAs by MOCVD, which reveals the potential of the GaP-substrate MBE technology for the widest bandgap II-VI heterostructures incorporating ZnS-based ternary alloys. Copyright © 1996 Elsevier Science Ltd.

KW - A. Quantum wells

KW - A. Semiconductors

KW - B. Epitaxy

KW - D. Optical properties

KW - E. Luminescence

U2 - 10.1016/0038-1098(96)00265-7

DO - 10.1016/0038-1098(96)00265-7

M3 - Article

SN - 0038-1098

VL - 99

SP - 407

EP - 411

JO - Solid State Communications

JF - Solid State Communications

IS - 6

ER -

Optically pumped stimulated emission in ZnS/ZnCdS multiple quantum-wells, MBE-grown on GaP

Abstract

Keywords

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