Optimisation of the optical emission of bilayers of quantum dots

M A Migliorato; P Navaretti; D J Norris; S L Liew; A G Cullis; H Y Liu; M J Steer; M Hopkinson

Optimisation of the optical emission of bilayers of quantum dots

M A Migliorato, P Navaretti, D J Norris, S L Liew, A G Cullis, H Y Liu, M J Steer, M Hopkinson

Research output: Chapter in Book/Conference proceeding › Chapter › peer-review

Abstract

We discuss a novel approach to the optimisation of quantum dot bilayer structures grown by molecular beam epitaxy. It has been observed that vertically stacked quantum dot structures often exhibit an increase in the average size of the islands with increasing number of quantum dot layers deposited. The understanding of the In segregation induced Stranski-Krastanow transition suggests that this is due to excess of In caused by elemental segregation. In order to limit the non uniformity of the sizes along the stacks we have grown the upper layers with different concentrations of In, showing that the optimum fraction is the one predicted by the kinetic segregation model.

Original language	English
Title of host publication	Microscopy of Semiconducting Materials 2003
Editors	A. G. Cullis, P. A. Midgley
Publisher	IOP Publishing Ltd
Pages	103-106
Number of pages	4
ISBN (Print)	0951-3248 0-7503-0979-2
Publication status	Published - 2003
Event	Institute of Physics Conference - Cambridge University, Cambridge, United Kingdom Duration: 31 Mar 2003 → 3 Apr 2003

Publication series

Name	Institute of Physics Conference Series
Number	181

Conference

Conference	Institute of Physics Conference
Country/Territory	United Kingdom
City	Cambridge
Period	31/03/03 → 3/04/03

Cite this

@inbook{bc4e31adbb7b4ff497ed3c5203dc4f98,

title = "Optimisation of the optical emission of bilayers of quantum dots",

abstract = "We discuss a novel approach to the optimisation of quantum dot bilayer structures grown by molecular beam epitaxy. It has been observed that vertically stacked quantum dot structures often exhibit an increase in the average size of the islands with increasing number of quantum dot layers deposited. The understanding of the In segregation induced Stranski-Krastanow transition suggests that this is due to excess of In caused by elemental segregation. In order to limit the non uniformity of the sizes along the stacks we have grown the upper layers with different concentrations of In, showing that the optimum fraction is the one predicted by the kinetic segregation model.",

author = "Migliorato, {M A} and P Navaretti and Norris, {D J} and Liew, {S L} and Cullis, {A G} and Liu, {H Y} and Steer, {M J} and M Hopkinson",

note = "Times Cited: 0 Conference on Microscopy of Semiconducting Materials MAR 31, 2003 Univ Cambridge, Cambridge, ENGLAND Inst Phys, Electron Microscopy & Analy Grp; Royal Microcop So c; Mat Res Soc; Institute of Physics Conference ; Conference date: 31-03-2003 Through 03-04-2003",

year = "2003",

language = "English",

isbn = "0951-3248 0-7503-0979-2",

series = "Institute of Physics Conference Series",

publisher = "IOP Publishing Ltd",

number = "181",

pages = "103--106",

editor = "Cullis, {A. G.} and Midgley, {P. A.}",

booktitle = "Microscopy of Semiconducting Materials 2003",

address = "United Kingdom",

}

Migliorato, MA, Navaretti, P, Norris, DJ, Liew, SL, Cullis, AG, Liu, HY, Steer, MJ & Hopkinson, M 2003, Optimisation of the optical emission of bilayers of quantum dots. in AG Cullis & PA Midgley (eds), Microscopy of Semiconducting Materials 2003. Institute of Physics Conference Series, no. 181, IOP Publishing Ltd, pp. 103-106, Institute of Physics Conference , Cambridge, United Kingdom, 31/03/03.

TY - CHAP

T1 - Optimisation of the optical emission of bilayers of quantum dots

AU - Migliorato, M A

AU - Navaretti, P

AU - Norris, D J

AU - Liew, S L

AU - Cullis, A G

AU - Liu, H Y

AU - Steer, M J

AU - Hopkinson, M

N1 - Times Cited: 0 Conference on Microscopy of Semiconducting Materials MAR 31, 2003 Univ Cambridge, Cambridge, ENGLAND Inst Phys, Electron Microscopy & Analy Grp; Royal Microcop So c; Mat Res Soc

PY - 2003

Y1 - 2003

N2 - We discuss a novel approach to the optimisation of quantum dot bilayer structures grown by molecular beam epitaxy. It has been observed that vertically stacked quantum dot structures often exhibit an increase in the average size of the islands with increasing number of quantum dot layers deposited. The understanding of the In segregation induced Stranski-Krastanow transition suggests that this is due to excess of In caused by elemental segregation. In order to limit the non uniformity of the sizes along the stacks we have grown the upper layers with different concentrations of In, showing that the optimum fraction is the one predicted by the kinetic segregation model.

AB - We discuss a novel approach to the optimisation of quantum dot bilayer structures grown by molecular beam epitaxy. It has been observed that vertically stacked quantum dot structures often exhibit an increase in the average size of the islands with increasing number of quantum dot layers deposited. The understanding of the In segregation induced Stranski-Krastanow transition suggests that this is due to excess of In caused by elemental segregation. In order to limit the non uniformity of the sizes along the stacks we have grown the upper layers with different concentrations of In, showing that the optimum fraction is the one predicted by the kinetic segregation model.

M3 - Chapter

SN - 0951-3248 0-7503-0979-2

T3 - Institute of Physics Conference Series

SP - 103

EP - 106

BT - Microscopy of Semiconducting Materials 2003

A2 - Cullis, A. G.

A2 - Midgley, P. A.

PB - IOP Publishing Ltd

T2 - Institute of Physics Conference

Y2 - 31 March 2003 through 3 April 2003

ER -

Optimisation of the optical emission of bilayers of quantum dots

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