Optoelectronic semiconductor devices

Daniel Leong; Anthony Harry Milton; Kevin P. Homewood; Karen Kirkby

Optoelectronic semiconductor devices

Daniel Leong (Inventor), Anthony Harry Milton (Inventor), Kevin P. Homewood (Inventor), Karen Kirkby (Inventor)

Research output: Patent

Abstract

An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (beta-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mum. Photodetector devices are also described

Original language	English
Patent number	US6288415
IPC	H01L 33/ 34 A I
Priority date	22/10/97
Publication status	Published - 11 Sept 2001

Cite this

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title = "Optoelectronic semiconductor devices",

abstract = "An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (beta-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mum. Photodetector devices are also described",

author = "Daniel Leong and Milton, {Anthony Harry} and Homewood, {Kevin P.} and Karen Kirkby",

year = "2001",

month = sep,

day = "11",

language = "English",

type = "Patent",

note = "US6288415; H01L 33/ 34 A I",

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T1 - Optoelectronic semiconductor devices

AU - Leong, Daniel

AU - Milton, Anthony Harry

AU - Homewood, Kevin P.

AU - Kirkby, Karen

PY - 2001/9/11

Y1 - 2001/9/11

N2 - An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (beta-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mum. Photodetector devices are also described

AB - An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (beta-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mum. Photodetector devices are also described

M3 - Patent

M1 - US6288415

ER -

Optoelectronic semiconductor devices

Abstract

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