Optoelectronic semiconductor devices

Daniel Leong (Inventor), Anthony Harry Milton (Inventor), Kevin P. Homewood (Inventor), Karen Kirkby (Inventor)

    Research output: Patent


    An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (beta-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mum. Photodetector devices are also described

    Original languageEnglish
    Patent numberUS6288415
    IPCH01L 33/ 34 A I
    Priority date22/10/97
    Publication statusPublished - 11 Sep 2001


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