OPTOELECTRONIC SEMICONDUCTOR DEVICES

Kevin P. Homewood; Daniel Leong; Anthony Harry Milton; Karen Kirkby

OPTOELECTRONIC SEMICONDUCTOR DEVICES

Kevin P. Homewood (Inventor), Daniel Leong (Inventor), Anthony Harry Milton (Inventor), Karen Kirkby (Inventor)

University of Surrey

Research output: Patent

Abstract

PURPOSE: An optoelectronic semiconductor device is provided to have an architecture wherein a junction built in an indirect band gap semiconductor substrate has direct band gap semiconductor material incorporated to form a distinct photoactive region. CONSTITUTION: A silicon p-n junction(10) has a depletion region(18) at the interface of the p and n type regions(11,12) and a photo active region(19) which is provided in the p-type region(11) adjacent to the depletion region(18). The photo active region(19) contains, or consists of, the direct band gap semiconductor material, beta-iron disilicide ([beta]-FeSi2). [beta]-FeSi2 has a band gap corresponding to a wavelength of about 1.5cm

Original language	English
Patent number	KR20000052787
IPC	H01L 33/ 34 A I
Priority date	24/10/96
Publication status	Published - 25 Aug 2000

Cite this

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title = "OPTOELECTRONIC SEMICONDUCTOR DEVICES",

abstract = "PURPOSE: An optoelectronic semiconductor device is provided to have an architecture wherein a junction built in an indirect band gap semiconductor substrate has direct band gap semiconductor material incorporated to form a distinct photoactive region. CONSTITUTION: A silicon p-n junction(10) has a depletion region(18) at the interface of the p and n type regions(11,12) and a photo active region(19) which is provided in the p-type region(11) adjacent to the depletion region(18). The photo active region(19) contains, or consists of, the direct band gap semiconductor material, beta-iron disilicide ([beta]-FeSi2). [beta]-FeSi2 has a band gap corresponding to a wavelength of about 1.5cm",

author = "Homewood, {Kevin P.} and Daniel Leong and Milton, {Anthony Harry} and Karen Kirkby",

year = "2000",

month = aug,

day = "25",

language = "English",

type = "Patent",

note = "KR20000052787; H01L 33/ 34 A I",

}

TY - PAT

T1 - OPTOELECTRONIC SEMICONDUCTOR DEVICES

AU - Homewood, Kevin P.

AU - Leong, Daniel

AU - Milton, Anthony Harry

AU - Kirkby, Karen

PY - 2000/8/25

Y1 - 2000/8/25

N2 - PURPOSE: An optoelectronic semiconductor device is provided to have an architecture wherein a junction built in an indirect band gap semiconductor substrate has direct band gap semiconductor material incorporated to form a distinct photoactive region. CONSTITUTION: A silicon p-n junction(10) has a depletion region(18) at the interface of the p and n type regions(11,12) and a photo active region(19) which is provided in the p-type region(11) adjacent to the depletion region(18). The photo active region(19) contains, or consists of, the direct band gap semiconductor material, beta-iron disilicide ([beta]-FeSi2). [beta]-FeSi2 has a band gap corresponding to a wavelength of about 1.5cm

AB - PURPOSE: An optoelectronic semiconductor device is provided to have an architecture wherein a junction built in an indirect band gap semiconductor substrate has direct band gap semiconductor material incorporated to form a distinct photoactive region. CONSTITUTION: A silicon p-n junction(10) has a depletion region(18) at the interface of the p and n type regions(11,12) and a photo active region(19) which is provided in the p-type region(11) adjacent to the depletion region(18). The photo active region(19) contains, or consists of, the direct band gap semiconductor material, beta-iron disilicide ([beta]-FeSi2). [beta]-FeSi2 has a band gap corresponding to a wavelength of about 1.5cm

M3 - Patent

M1 - KR20000052787

ER -

OPTOELECTRONIC SEMICONDUCTOR DEVICES

Abstract

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