Abstract
PURPOSE: An optoelectronic semiconductor device is provided to have an architecture wherein a junction built in an indirect band gap semiconductor substrate has direct band gap semiconductor material incorporated to form a distinct photoactive region. CONSTITUTION: A silicon p-n junction(10) has a depletion region(18) at the interface of the p and n type regions(11,12) and a photo active region(19) which is provided in the p-type region(11) adjacent to the depletion region(18). The photo active region(19) contains, or consists of, the direct band gap semiconductor material, beta-iron disilicide ([beta]-FeSi2). [beta]-FeSi2 has a band gap corresponding to a wavelength of about 1.5cm
Original language | English |
---|---|
Patent number | KR20000052787 |
IPC | H01L 33/ 34 A I |
Priority date | 24/10/96 |
Publication status | Published - 25 Aug 2000 |