Kevin P. Homewood (Inventor), Daniel Leong (Inventor), Anthony Harry Milton (Inventor), Karen Kirkby (Inventor)

    Research output: Patent


    PURPOSE: An optoelectronic semiconductor device is provided to have an architecture wherein a junction built in an indirect band gap semiconductor substrate has direct band gap semiconductor material incorporated to form a distinct photoactive region. CONSTITUTION: A silicon p-n junction(10) has a depletion region(18) at the interface of the p and n type regions(11,12) and a photo active region(19) which is provided in the p-type region(11) adjacent to the depletion region(18). The photo active region(19) contains, or consists of, the direct band gap semiconductor material, beta-iron disilicide ([beta]-FeSi2). [beta]-FeSi2 has a band gap corresponding to a wavelength of about 1.5cm

    Original languageEnglish
    Patent numberKR20000052787
    IPCH01L 33/ 34 A I
    Priority date24/10/96
    Publication statusPublished - 25 Aug 2000


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