OPTOELECTRONIC SEMICONDUCTOR DEVICES

Daniel Leong; Anthony Harry Milton; Kevin P. Homewood; Karen Kirkby

OPTOELECTRONIC SEMICONDUCTOR DEVICES

Daniel Leong (Inventor), Anthony Harry Milton (Inventor), Kevin P. Homewood (Inventor), Karen Kirkby (Inventor)

University of Surrey

Research output: Patent

Abstract

An optoelectronic semiconductor device in the form on an LED comprises a silicon p-n junction (10) having a photoactive region (18) containing beta-iron disilicide ( beta -FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mu m. Photodectector devices are also described.

Original language	English
Patent number	WO9818167
IPC	H01L 33/ 34 A I
Priority date	24/10/96
Publication status	Published - 30 Apr 1998

Cite this

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title = "OPTOELECTRONIC SEMICONDUCTOR DEVICES",

abstract = "An optoelectronic semiconductor device in the form on an LED comprises a silicon p-n junction (10) having a photoactive region (18) containing beta-iron disilicide ( beta -FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mu m. Photodectector devices are also described.",

author = "Daniel Leong and Milton, {Anthony Harry} and Homewood, {Kevin P.} and Karen Kirkby",

year = "1998",

month = apr,

day = "30",

language = "English",

type = "Patent",

note = "WO9818167; H01L 33/ 34 A I",

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TY - PAT

T1 - OPTOELECTRONIC SEMICONDUCTOR DEVICES

AU - Leong, Daniel

AU - Milton, Anthony Harry

AU - Homewood, Kevin P.

AU - Kirkby, Karen

PY - 1998/4/30

Y1 - 1998/4/30

N2 - An optoelectronic semiconductor device in the form on an LED comprises a silicon p-n junction (10) having a photoactive region (18) containing beta-iron disilicide ( beta -FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mu m. Photodectector devices are also described.

AB - An optoelectronic semiconductor device in the form on an LED comprises a silicon p-n junction (10) having a photoactive region (18) containing beta-iron disilicide ( beta -FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 mu m. Photodectector devices are also described.

M3 - Patent

M1 - WO9818167

ER -

OPTOELECTRONIC SEMICONDUCTOR DEVICES

Abstract

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