Optoelectronic semiconductor devices

Daniel Leong (Inventor), Anthony Harry Milton (Inventor), Kevin P. Homewood (Inventor), Karen Kirkby (Inventor)

    Research output: Patent


    An optoelectronic semiconductor device in the form on an LED comprises a silicon p-n junction 10 having a photoactive region 18 containing beta-iron disilicide (* small Greek beta *-FeSi 2 ). The LED produces electroluminescence at a wavelength of about 1.5~m.

    Original languageEnglish
    Patent numberGB2318680
    IPCH01L 33/ 34 A I
    Priority date24/10/96
    Publication statusPublished - 29 Apr 1998


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