Abstract
An optoelectronic semiconductor device in the form on an LED comprises a silicon p-n junction 10 having a photoactive region 18 containing beta-iron disilicide (* small Greek beta *-FeSi 2 ). The LED produces electroluminescence at a wavelength of about 1.5~m.
Original language | English |
---|---|
Patent number | GB2318680 |
IPC | H01L 33/ 34 A I |
Priority date | 24/10/96 |
Publication status | Published - 29 Apr 1998 |