Order domain boundaries in ion beam synthesized semiconducting FeSi 2 layers

Z. Yang; G. Shao; K. P. Homewood; K. J. Reeson; M. S. Finney; M. Harry

doi:10.1063/1.115197

Order domain boundaries in ion beam synthesized semiconducting FeSi ₂ layers

Z. Yang^*, G. Shao, K. P. Homewood, K. J. Reeson, M. S. Finney, M. Harry

^*Corresponding author for this work

Division of Cancer Sciences (L5)

University of Surrey

Research output: Contribution to journal › Article › peer-review

Abstract

The internal streaking contrast within ion beam synthesized β-FeSi₂ (β) grains has been studied. The results show that this internal streaking contrast is caused by the interfaces between coexistent β order domains (ODs) which are 90°oriented to one another around [200]_β. The interface between adjacent ODs is (200) _β. The mechanism for the formation of order domain boundaries (ODBs) is attributed to the impingements of separately nucleated growing silicide nuclei during the process of ion implantation and subsequent thermal annealing.

Original language	English
Pages (from-to)	667
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115197
Publication status	Published - 1995

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title = "Order domain boundaries in ion beam synthesized semiconducting FeSi 2 layers",

abstract = "The internal streaking contrast within ion beam synthesized β-FeSi2 (β) grains has been studied. The results show that this internal streaking contrast is caused by the interfaces between coexistent β order domains (ODs) which are 90°oriented to one another around [200]β. The interface between adjacent ODs is (200) β. The mechanism for the formation of order domain boundaries (ODBs) is attributed to the impingements of separately nucleated growing silicide nuclei during the process of ion implantation and subsequent thermal annealing.",

author = "Z. Yang and G. Shao and Homewood, {K. P.} and Reeson, {K. J.} and Finney, {M. S.} and M. Harry",

year = "1995",

doi = "10.1063/1.115197",

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pages = "667",

journal = "Applied Physics Letters",

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T1 - Order domain boundaries in ion beam synthesized semiconducting FeSi 2 layers

AU - Yang, Z.

AU - Shao, G.

AU - Homewood, K. P.

AU - Reeson, K. J.

AU - Finney, M. S.

AU - Harry, M.

PY - 1995

Y1 - 1995

N2 - The internal streaking contrast within ion beam synthesized β-FeSi2 (β) grains has been studied. The results show that this internal streaking contrast is caused by the interfaces between coexistent β order domains (ODs) which are 90°oriented to one another around [200]β. The interface between adjacent ODs is (200) β. The mechanism for the formation of order domain boundaries (ODBs) is attributed to the impingements of separately nucleated growing silicide nuclei during the process of ion implantation and subsequent thermal annealing.

AB - The internal streaking contrast within ion beam synthesized β-FeSi2 (β) grains has been studied. The results show that this internal streaking contrast is caused by the interfaces between coexistent β order domains (ODs) which are 90°oriented to one another around [200]β. The interface between adjacent ODs is (200) β. The mechanism for the formation of order domain boundaries (ODBs) is attributed to the impingements of separately nucleated growing silicide nuclei during the process of ion implantation and subsequent thermal annealing.

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DO - 10.1063/1.115197

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VL - 67

SP - 667

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Order domain boundaries in ion beam synthesized semiconducting FeSi ₂ layers

Abstract

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