Organic field-effect transistors with ultrathin modified gate insulator

L. A. Majewski, M. Grell

    Research output: Contribution to journalArticlepeer-review


    In this communication, we demonstrate high capacitance, low-voltage organic field-effect transistors (OFETs) built on extremely cheap, flexible, commercially available aluminized Mylar® films covered by ultrathin (∼3.5 nm) SiO2 layers, which were modified via application of n-octadecytrichlorosilane (OTS) self-assembled monolayer. The modified SiO2 was tested as gate insulator in OFETs using pentacene and regioregular poly(3-hexylthiophene) (rr-P3HT) as active materials. The characteristics of the fabricated devices display low threshold (
    Original languageEnglish
    Pages (from-to)175-179
    Number of pages4
    JournalSynthetic Metals
    Issue number2
    Publication statusPublished - 14 Jun 2005


    • Gate insulator
    • Low voltage
    • Organic field-effect transistor (OFET)
    • Self-assembled monolayer (SAM)


    Dive into the research topics of 'Organic field-effect transistors with ultrathin modified gate insulator'. Together they form a unique fingerprint.

    Cite this