Organic field-effect transistors with ultrathin modified gate insulator

L. A. Majewski; M. Grell

doi:10.1016/j.synthmet.2005.04.006

Organic field-effect transistors with ultrathin modified gate insulator

Research output: Contribution to journal › Article › peer-review

Abstract

In this communication, we demonstrate high capacitance, low-voltage organic field-effect transistors (OFETs) built on extremely cheap, flexible, commercially available aluminized Mylar® films covered by ultrathin (∼3.5 nm) SiO2 layers, which were modified via application of n-octadecytrichlorosilane (OTS) self-assembled monolayer. The modified SiO2 was tested as gate insulator in OFETs using pentacene and regioregular poly(3-hexylthiophene) (rr-P3HT) as active materials. The characteristics of the fabricated devices display low threshold (

Original language	English
Pages (from-to)	175-179
Number of pages	4
Journal	Synthetic Metals
Volume	151
Issue number	2
DOIs	https://doi.org/10.1016/j.synthmet.2005.04.006
Publication status	Published - 14 Jun 2005

Keywords

Gate insulator
Low voltage
Organic field-effect transistor (OFET)
Self-assembled monolayer (SAM)

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10.1016/j.synthmet.2005.04.006

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title = "Organic field-effect transistors with ultrathin modified gate insulator",

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AB - In this communication, we demonstrate high capacitance, low-voltage organic field-effect transistors (OFETs) built on extremely cheap, flexible, commercially available aluminized Mylar® films covered by ultrathin (∼3.5 nm) SiO2 layers, which were modified via application of n-octadecytrichlorosilane (OTS) self-assembled monolayer. The modified SiO2 was tested as gate insulator in OFETs using pentacene and regioregular poly(3-hexylthiophene) (rr-P3HT) as active materials. The characteristics of the fabricated devices display low threshold (

KW - Gate insulator

KW - Low voltage

KW - Organic field-effect transistor (OFET)

KW - Self-assembled monolayer (SAM)

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JO - Synthetic Metals

JF - Synthetic Metals

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ER -

Organic field-effect transistors with ultrathin modified gate insulator

Abstract

Keywords

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