Organotin dithiocarbamates: Single-source precursors for tin sulfide thin films by aerosol-assisted chemical vapor deposition (AACVD)

Karthik Ramasamy; Vladimir L. Kuznetsov; Kandasamy Gopal; Mohammad A. Malik; James Raftery; Peter P. Edwards; Paul O'Brien

doi:10.1021/cm301660n

Organotin dithiocarbamates: Single-source precursors for tin sulfide thin films by aerosol-assisted chemical vapor deposition (AACVD)

Karthik Ramasamy, Vladimir L. Kuznetsov, Kandasamy Gopal, Mohammad A. Malik, James Raftery, Peter P. Edwards, Paul O'Brien

Research output: Contribution to journal › Article › peer-review

Abstract

A series of diorganotin complexes of dithiocarbamates [Sn(C ₄H₉)₂(S₂CN(RR′) ₂)₂] (R, R′ = ethyl (1); R = methyl, R′ = butyl (2); R, R′ = butyl (3); R = methyl, R′ = hexyl (4); and [Sn(C₆H₅)₂(S₂CN(RR′) ₂)₂] (R, R′ = ethyl (5); R = methyl, R′ = butyl (6); R, R′ = butyl (7); R = methyl, R′ = hexyl (8) were synthesized. Single-crystal X-ray structures of 2, 3, and 8 were determined. Thermogravimetric analysis (TGA) showed single-step decomposition for the complexes 1, 3, and 5-8, and double-step decomposition for the complexes 2 and 4 between 195 C and 325 C. Complexes 1-4 were used as single-source precursors for the deposition of SnS thin films by aerosol-assisted chemical vapor deposition (AACVD) at temperatures from 400 C to 530 C. Orthorhombic SnS thin films were deposited from all four complexes at all deposition temperatures. The films were characterized by UV-vis spectroscopy, powder X-ray diffraction (p-XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and also electrical resistivity measurements.

Original language	English
Pages (from-to)	266-276
Number of pages	11
Journal	Chemistry of Materials
Volume	25
Issue number	3
DOIs	https://doi.org/10.1021/cm301660n
Publication status	Published - 12 Feb 2013

Keywords

aerosol-assisted chemical vapor deposition
diorganotin dithiocarbamate
single source precursors
thin films
tin sulfide

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10.1021/cm301660n

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@article{7566594f89fd45308c0907789d791edc,

title = "Organotin dithiocarbamates: Single-source precursors for tin sulfide thin films by aerosol-assisted chemical vapor deposition (AACVD)",

abstract = "A series of diorganotin complexes of dithiocarbamates [Sn(C 4H9)2(S2CN(RR′) 2)2] (R, R′ = ethyl (1); R = methyl, R′ = butyl (2); R, R′ = butyl (3); R = methyl, R′ = hexyl (4); and [Sn(C6H5)2(S2CN(RR′) 2)2] (R, R′ = ethyl (5); R = methyl, R′ = butyl (6); R, R′ = butyl (7); R = methyl, R′ = hexyl (8) were synthesized. Single-crystal X-ray structures of 2, 3, and 8 were determined. Thermogravimetric analysis (TGA) showed single-step decomposition for the complexes 1, 3, and 5-8, and double-step decomposition for the complexes 2 and 4 between 195 C and 325 C. Complexes 1-4 were used as single-source precursors for the deposition of SnS thin films by aerosol-assisted chemical vapor deposition (AACVD) at temperatures from 400 C to 530 C. Orthorhombic SnS thin films were deposited from all four complexes at all deposition temperatures. The films were characterized by UV-vis spectroscopy, powder X-ray diffraction (p-XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and also electrical resistivity measurements.",

keywords = "aerosol-assisted chemical vapor deposition, diorganotin dithiocarbamate, single source precursors, thin films, tin sulfide",

author = "Karthik Ramasamy and Kuznetsov, {Vladimir L.} and Kandasamy Gopal and Malik, {Mohammad A.} and James Raftery and Edwards, {Peter P.} and Paul O'Brien",

year = "2013",

month = feb,

day = "12",

doi = "10.1021/cm301660n",

language = "English",

volume = "25",

pages = "266--276",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "3",

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TY - JOUR

T1 - Organotin dithiocarbamates

T2 - Single-source precursors for tin sulfide thin films by aerosol-assisted chemical vapor deposition (AACVD)

AU - Ramasamy, Karthik

AU - Kuznetsov, Vladimir L.

AU - Gopal, Kandasamy

AU - Malik, Mohammad A.

AU - Raftery, James

AU - Edwards, Peter P.

AU - O'Brien, Paul

PY - 2013/2/12

Y1 - 2013/2/12

N2 - A series of diorganotin complexes of dithiocarbamates [Sn(C 4H9)2(S2CN(RR′) 2)2] (R, R′ = ethyl (1); R = methyl, R′ = butyl (2); R, R′ = butyl (3); R = methyl, R′ = hexyl (4); and [Sn(C6H5)2(S2CN(RR′) 2)2] (R, R′ = ethyl (5); R = methyl, R′ = butyl (6); R, R′ = butyl (7); R = methyl, R′ = hexyl (8) were synthesized. Single-crystal X-ray structures of 2, 3, and 8 were determined. Thermogravimetric analysis (TGA) showed single-step decomposition for the complexes 1, 3, and 5-8, and double-step decomposition for the complexes 2 and 4 between 195 C and 325 C. Complexes 1-4 were used as single-source precursors for the deposition of SnS thin films by aerosol-assisted chemical vapor deposition (AACVD) at temperatures from 400 C to 530 C. Orthorhombic SnS thin films were deposited from all four complexes at all deposition temperatures. The films were characterized by UV-vis spectroscopy, powder X-ray diffraction (p-XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and also electrical resistivity measurements.

AB - A series of diorganotin complexes of dithiocarbamates [Sn(C 4H9)2(S2CN(RR′) 2)2] (R, R′ = ethyl (1); R = methyl, R′ = butyl (2); R, R′ = butyl (3); R = methyl, R′ = hexyl (4); and [Sn(C6H5)2(S2CN(RR′) 2)2] (R, R′ = ethyl (5); R = methyl, R′ = butyl (6); R, R′ = butyl (7); R = methyl, R′ = hexyl (8) were synthesized. Single-crystal X-ray structures of 2, 3, and 8 were determined. Thermogravimetric analysis (TGA) showed single-step decomposition for the complexes 1, 3, and 5-8, and double-step decomposition for the complexes 2 and 4 between 195 C and 325 C. Complexes 1-4 were used as single-source precursors for the deposition of SnS thin films by aerosol-assisted chemical vapor deposition (AACVD) at temperatures from 400 C to 530 C. Orthorhombic SnS thin films were deposited from all four complexes at all deposition temperatures. The films were characterized by UV-vis spectroscopy, powder X-ray diffraction (p-XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and also electrical resistivity measurements.

KW - aerosol-assisted chemical vapor deposition

KW - diorganotin dithiocarbamate

KW - single source precursors

KW - thin films

KW - tin sulfide

UR - http://www.scopus.com/inward/record.url?scp=84873628398&partnerID=8YFLogxK

U2 - 10.1021/cm301660n

DO - 10.1021/cm301660n

M3 - Article

AN - SCOPUS:84873628398

SN - 0897-4756

VL - 25

SP - 266

EP - 276

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 3

ER -

Organotin dithiocarbamates: Single-source precursors for tin sulfide thin films by aerosol-assisted chemical vapor deposition (AACVD)

Abstract

Keywords

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CCDC 806738: Experimental Crystal Structure Determination

CCDC 806740: Experimental Crystal Structure Determination

CCDC 806739: Experimental Crystal Structure Determination

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Organotin dithiocarbamates: Single-source precursors for tin sulfide thin films by aerosol-assisted chemical vapor deposition (AACVD)

Abstract

Keywords

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Datasets

CCDC 806738: Experimental Crystal Structure Determination

CCDC 806740: Experimental Crystal Structure Determination

CCDC 806739: Experimental Crystal Structure Determination

Cite this