Origin of compressive strain and phase transition characteristics of thin BaTiO3 film grown on LaNiO3/Si substrate

L Qiao; X F Bi

doi:10.1002/pssa.201026271

Origin of compressive strain and phase transition characteristics of thin BaTiO3 film grown on LaNiO3/Si substrate

L Qiao, X F Bi

Research output: Contribution to journal › Article › peer-review

Abstract

BaTiO3 (BTO) thin films of 100 nm were grown on Si substrates buffered with LaNiO3 (LNO) layers with various thicknesses. X-ray diffraction and strain analysis demonstrate that the BTO film grown on the LNO of 600 nm is in an in-plane compressive strain state. The remnant polarization of 10.2 mu C/cm(2) obtained for the film also indicates the presence of the compressive strain state. However, dielectric measurement reveals a phase transition temperature of 100 degrees C, lower than the typical value of 120 degrees C. The result is discussed in terms of the stiffening of soft mode in the center of Brillouin zone. The corresponding domain configuration is also investigated. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Original language	English
Pages (from-to)	2511-2516
Number of pages	6
Journal	Physica Status Solidi a-Applications and Materials Science
Volume	207
Issue number	11
DOIs	https://doi.org/10.1002/pssa.201026271
Publication status	Published - 2010

Keywords

BaTiO3
ferroelectrics
LaNiO3
strain
phase transitions
thin films
PULSED-LASER DEPOSITION
FERROELECTRIC PROPERTIES
DIELECTRIC-PROPERTIES
DOMAIN FORMATION
BUFFER LAYERS
SI
HETEROSTRUCTURES
CAPACITORS
THICKNESS
SI(001)

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10.1002/pssa.201026271

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@article{9a648f8d78fc4a4794b4e7d375c0c1fa,

title = "Origin of compressive strain and phase transition characteristics of thin BaTiO3 film grown on LaNiO3/Si substrate",

abstract = "BaTiO3 (BTO) thin films of 100 nm were grown on Si substrates buffered with LaNiO3 (LNO) layers with various thicknesses. X-ray diffraction and strain analysis demonstrate that the BTO film grown on the LNO of 600 nm is in an in-plane compressive strain state. The remnant polarization of 10.2 mu C/cm(2) obtained for the film also indicates the presence of the compressive strain state. However, dielectric measurement reveals a phase transition temperature of 100 degrees C, lower than the typical value of 120 degrees C. The result is discussed in terms of the stiffening of soft mode in the center of Brillouin zone. The corresponding domain configuration is also investigated. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

keywords = "BaTiO3, ferroelectrics, LaNiO3, strain, phase transitions, thin films, PULSED-LASER DEPOSITION, FERROELECTRIC PROPERTIES, DIELECTRIC-PROPERTIES, DOMAIN FORMATION, BUFFER LAYERS, SI, HETEROSTRUCTURES, CAPACITORS, THICKNESS, SI(001)",

author = "L Qiao and Bi, {X F}",

note = "ISI Document Delivery No.: 678EI Times Cited: 3 Cited Reference Count: 43 Qiao, Liang Bi, Xiaofang WILEY-BLACKWELL",

year = "2010",

doi = "10.1002/pssa.201026271",

language = "English",

volume = "207",

pages = "2511--2516",

journal = "Physica Status Solidi a-Applications and Materials Science",

issn = "1862-6300",

publisher = "John Wiley & Sons Ltd",

number = "11",

}

TY - JOUR

T1 - Origin of compressive strain and phase transition characteristics of thin BaTiO3 film grown on LaNiO3/Si substrate

AU - Qiao, L

AU - Bi, X F

N1 - ISI Document Delivery No.: 678EI Times Cited: 3 Cited Reference Count: 43 Qiao, Liang Bi, Xiaofang WILEY-BLACKWELL

PY - 2010

Y1 - 2010

N2 - BaTiO3 (BTO) thin films of 100 nm were grown on Si substrates buffered with LaNiO3 (LNO) layers with various thicknesses. X-ray diffraction and strain analysis demonstrate that the BTO film grown on the LNO of 600 nm is in an in-plane compressive strain state. The remnant polarization of 10.2 mu C/cm(2) obtained for the film also indicates the presence of the compressive strain state. However, dielectric measurement reveals a phase transition temperature of 100 degrees C, lower than the typical value of 120 degrees C. The result is discussed in terms of the stiffening of soft mode in the center of Brillouin zone. The corresponding domain configuration is also investigated. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

AB - BaTiO3 (BTO) thin films of 100 nm were grown on Si substrates buffered with LaNiO3 (LNO) layers with various thicknesses. X-ray diffraction and strain analysis demonstrate that the BTO film grown on the LNO of 600 nm is in an in-plane compressive strain state. The remnant polarization of 10.2 mu C/cm(2) obtained for the film also indicates the presence of the compressive strain state. However, dielectric measurement reveals a phase transition temperature of 100 degrees C, lower than the typical value of 120 degrees C. The result is discussed in terms of the stiffening of soft mode in the center of Brillouin zone. The corresponding domain configuration is also investigated. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

KW - BaTiO3

KW - ferroelectrics

KW - LaNiO3

KW - strain

KW - phase transitions

KW - thin films

KW - PULSED-LASER DEPOSITION

KW - FERROELECTRIC PROPERTIES

KW - DIELECTRIC-PROPERTIES

KW - DOMAIN FORMATION

KW - BUFFER LAYERS

KW - SI

KW - HETEROSTRUCTURES

KW - CAPACITORS

KW - THICKNESS

KW - SI(001)

U2 - 10.1002/pssa.201026271

DO - 10.1002/pssa.201026271

M3 - Article

SN - 1862-6300

VL - 207

SP - 2511

EP - 2516

JO - Physica Status Solidi a-Applications and Materials Science

JF - Physica Status Solidi a-Applications and Materials Science

IS - 11

ER -

Origin of compressive strain and phase transition characteristics of thin BaTiO3 film grown on LaNiO3/Si substrate

Abstract

Keywords

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