Origin of the photon induced Cl+ yield from Si(111)7 × 7-Cl at the Cl and Si K-edges

D. Purdie*, C. A. Muryn, N. S. Prakash, P. L. Wincott, G. Thornton, D. S.L. Law

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The yield of Cl+ ions from Si(111)7 × 7-Cl has been monitored through both the Cl and Si K-edges. The Cl K-edge ion yield EXAFS suggests a majority site origin, the data producing the same result as Auger yield SEXAFS: an atop geometry with a Cl-Si bond length of 2.00 ± 0.02 Å. The Cl+-yield data recorded at the Si K-edge are identical to bulk Si EXAFS and the desorption mechanism at this edge is concluded to be X-ray induced electron stimulated desorption (XESD).

Original languageEnglish
Pages (from-to)546-550
Number of pages5
JournalSurface Science
Volume251-252
Issue numberC
DOIs
Publication statusPublished - 1 Jul 1991

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