Origin of the unusual reflectance and density contrasts in the phase-change material Cu2GeTe3

J. M. Skelton, Keisuke Kobayashi, Y. Sutou, S. R. Elliott

    Research output: Contribution to journalArticlepeer-review

    Abstract

    The recent demonstration of Cu2GeTe3 (CGT) as a potential phase-change material (PCM) for next-generation non-volatile memories represents a significant discovery. In contrast to widely studied PCMs, amorphous CGT is denser and more reflective than crystalline CGT, and the phase transition takes place to a tetrahedrally bonded crystal, a very different geometry to the octahedrally bonded cubic structures adopted by other PCMs. We have performed a computer-simulational study of CGT, investigating the atomic-level structure and physical properties of both phases. Our results lead to hypotheses to account for the higher amorphous-phase density and reflectivity, which may provide new design criteria for identifying novel PCMs.

    Original languageEnglish
    Article number224105
    JournalApplied Physics Letters
    Volume102
    Issue number22
    DOIs
    Publication statusPublished - 5 Jun 2013

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