Oscillating Magnetoresistance in Graphene p-n Junctions at Intermediate Magnetic Fields

Hiske Overweg, Hannah Eggimann, Ming Hao Liu, Anastasia Varlet, Marius Eich, Pauline Simonet, Yongjin Lee, Kenji Watanabe, Takashi Taniguchi, Klaus Richter, Vladimir Fal'ko, Klaus Ensslin, Thomas Ihn

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    Abstract

    We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p-regions.

    Original languageEnglish
    Pages (from-to)2852-2857
    Number of pages6
    JournalNano Letters
    Volume17
    Issue number5
    Early online date6 Apr 2017
    DOIs
    Publication statusPublished - 10 May 2017

    Keywords

    • ballistic transport
    • Graphene
    • magnetoresistance
    • p−n junction

    Research Beacons, Institutes and Platforms

    • National Graphene Institute

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