Passivation of titanium by hydrogen in silicon

S. Leonard, V. P. Markevich, A. R. Peaker, B. Hamilton

    Research output: Contribution to conferencePoster

    Abstract

    Interactions of hydrogen with titanium have been studied in Ti-doped n-type crystalline Si using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen plasma treatments of the samples at room temperature have resulted in the suppression of DLTS signals due to interstitial Ti atoms (Tii) and the appearance of three strong DLTS peaks, which are related to three different Ti-H defects. After annealing of the hydrogenated samples at 150°C in nitrogen, the signals due to Tii and two of the three H-related defects were not detected in the spectra showing that almost complete passivation of all electrically active defects occurred. © 2013 AIP Publishing LLC.
    Original languageEnglish
    DOIs
    Publication statusPublished - 23 Sept 2013
    Event23rd Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes - Beaver Run Resort, Colorado
    Duration: 27 Jul 20131 Aug 2013

    Conference

    Conference23rd Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes
    CityBeaver Run Resort, Colorado
    Period27/07/131/08/13

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