Passivation of titanium by hydrogen in silicon

S. Leonard; V. P. Markevich; A. R. Peaker; B. Hamilton

doi:10.1063/1.4822329

Passivation of titanium by hydrogen in silicon

S. Leonard, V. P. Markevich, A. R. Peaker, B. Hamilton

Research output: Contribution to journal › Article › peer-review

Abstract

Interactions of hydrogen with titanium have been studied in Ti-doped n-type crystalline Si using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen plasma treatments of the samples at room temperature have resulted in the suppression of DLTS signals due to interstitial Ti atoms (Tii) and the appearance of three strong DLTS peaks, which are related to three different Ti-H defects. After annealing of the hydrogenated samples at 150°C in nitrogen, the signals due to Tii and two of the three H-related defects were not detected in the spectra showing that almost complete passivation of all electrically active defects occurred. © 2013 AIP Publishing LLC.

Original language	English
Article number	132103
Journal	Applied Physics Letters
Volume	103
Issue number	13
DOIs	https://doi.org/10.1063/1.4822329
Publication status	Published - 23 Sept 2013

Keywords

annealing - deep level transient spectroscopy - elemental semiconductors - hydrogenation - interstitials - passivation - silicon - titanium

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@article{eab14a5e837f4e298b1b13ecb863fd51,

title = "Passivation of titanium by hydrogen in silicon",

abstract = "Interactions of hydrogen with titanium have been studied in Ti-doped n-type crystalline Si using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen plasma treatments of the samples at room temperature have resulted in the suppression of DLTS signals due to interstitial Ti atoms (Tii) and the appearance of three strong DLTS peaks, which are related to three different Ti-H defects. After annealing of the hydrogenated samples at 150°C in nitrogen, the signals due to Tii and two of the three H-related defects were not detected in the spectra showing that almost complete passivation of all electrically active defects occurred. {\textcopyright} 2013 AIP Publishing LLC.",

keywords = "annealing - deep level transient spectroscopy - elemental semiconductors - hydrogenation - interstitials - passivation - silicon - titanium",

author = "S. Leonard and Markevich, {V. P.} and Peaker, {A. R.} and B. Hamilton",

note = "cited By (since 1996)1",

year = "2013",

month = sep,

day = "23",

doi = "10.1063/1.4822329",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Passivation of titanium by hydrogen in silicon

AU - Leonard, S.

AU - Markevich, V. P.

AU - Peaker, A. R.

AU - Hamilton, B.

N1 - cited By (since 1996)1

PY - 2013/9/23

Y1 - 2013/9/23

N2 - Interactions of hydrogen with titanium have been studied in Ti-doped n-type crystalline Si using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen plasma treatments of the samples at room temperature have resulted in the suppression of DLTS signals due to interstitial Ti atoms (Tii) and the appearance of three strong DLTS peaks, which are related to three different Ti-H defects. After annealing of the hydrogenated samples at 150°C in nitrogen, the signals due to Tii and two of the three H-related defects were not detected in the spectra showing that almost complete passivation of all electrically active defects occurred. © 2013 AIP Publishing LLC.

AB - Interactions of hydrogen with titanium have been studied in Ti-doped n-type crystalline Si using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen plasma treatments of the samples at room temperature have resulted in the suppression of DLTS signals due to interstitial Ti atoms (Tii) and the appearance of three strong DLTS peaks, which are related to three different Ti-H defects. After annealing of the hydrogenated samples at 150°C in nitrogen, the signals due to Tii and two of the three H-related defects were not detected in the spectra showing that almost complete passivation of all electrically active defects occurred. © 2013 AIP Publishing LLC.

KW - annealing - deep level transient spectroscopy - elemental semiconductors - hydrogenation - interstitials - passivation - silicon - titanium

U2 - 10.1063/1.4822329

DO - 10.1063/1.4822329

M3 - Article

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132103

ER -

Passivation of titanium by hydrogen in silicon

Abstract

Keywords

UN SDGs

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