Phase-controlled deposition of copper sulfide thin films by using single-molecular precursors

Saba Ashraf, Aamer Saeed, Mohammad Azad Malik, Ulrich Flörke, Michael Bolte, Naghmah Haider, Javeed Akhtar

    Research output: Contribution to journalArticlepeer-review


    Herein, we describe the synthesis and characterization of new ligands, N,N-diethyl-N′-(1-naphthoyl)thiourea (1a) and N,N-dipropyl-N′-(1- naphthoyl)thiourea (1b), and their complexes with copper, bis[N,N-diethyl- N′-(1-naphthoyl)thioureato]CuII (2a) and bis[N,N-dipropyl- N′-(1-naphthoyl)thioureato]CuII (2b). All four compounds (i.e., 1a, 1b, 2a, and 2b) were characterized by elemental analysis, 1H NMR and 13C NMR spectroscopy, and FTIR spectroscopy. The structures of compounds 1a, 1b, and 2b were determined by single-crystal X-ray diffraction analysis. Thermogravimetric analysis of 2a and 2b showed that both compounds decompose between 190 and 370 °C. Compounds 2a and 2b were then used as single-molecular precursors for the deposition of copper sulfide thin films through aerosol-assisted chemical vapor deposition. The phase and purity of the as-deposited thin films were confirmed by powdered X-ray diffraction, which showed that the as-grown films were composed of the orthorhombic (Cu 7S4) phase only. Morphological studies of the as-deposited films were performed by using field-emission scanning electron microscopy. The elemental composition of the thin films was determined by energy-dispersive X-ray spectroscopy.

    Original languageEnglish
    Pages (from-to)533-538
    Number of pages6
    JournalEuropean Journal of Inorganic Chemistry
    Issue number3
    Publication statusPublished - 1 Jan 2014


    • Acyl thiourea
    • Chemical vapor deposition
    • Copper sulfide
    • Thin films


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