Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

E. E. Vdovin; A. Mishchenko; M. T. Greenaway; M. J. Zhu; D. Ghazaryan; A. Misra; Y. Cao; S. V. Morozov; O. Makarovsky; A. Patanè; G. J. Slotman; M. I. Katsnelson; A. K. Geim; K. S. Novoselov; L. Eaves; T. M. Fromhold

doi:10.1103/PhysRevLett.116.186603

Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

E. E. Vdovin, A. Mishchenko, M. T. Greenaway, M. J. Zhu, D. Ghazaryan, A. Misra, Y. Cao, S. V. Morozov, O. Makarovsky, A. Patanè, G. J. Slotman, M. I. Katsnelson, A. K. Geim, K. S. Novoselov, L. Eaves, T. M. Fromhold

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Abstract

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.

Original language	English
Article number	186603
Pages (from-to)	1-5
Number of pages	5
Journal	Phys. Rev. Lett.
Volume	116
DOIs	https://doi.org/10.1103/PhysRevLett.116.186603
Publication status	Published - 5 May 2016

Keywords

cond-mat.mes-hall

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Vdovin, E. E., Mishchenko, A., Greenaway, M. T., Zhu, M. J., Ghazaryan, D., Misra, A., Cao, Y., Morozov, S. V., Makarovsky, O., Patanè, A., Slotman, G. J., Katsnelson, M. I., Geim, A. K., Novoselov, K. S., Eaves, L., & Fromhold, T. M. (2016). Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors. Phys. Rev. Lett., 116, 1-5. Article 186603. https://doi.org/10.1103/PhysRevLett.116.186603

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title = "Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors",

abstract = "We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.",

keywords = "cond-mat.mes-hall",

author = "Vdovin, {E. E.} and A. Mishchenko and Greenaway, {M. T.} and Zhu, {M. J.} and D. Ghazaryan and A. Misra and Y. Cao and Morozov, {S. V.} and O. Makarovsky and A. Patan{\`e} and Slotman, {G. J.} and Katsnelson, {M. I.} and Geim, {A. K.} and Novoselov, {K. S.} and L. Eaves and Fromhold, {T. M.}",

year = "2016",

month = may,

day = "5",

doi = "10.1103/PhysRevLett.116.186603",

language = "English",

volume = "116",

pages = "1--5",

journal = "Phys. Rev. Lett.",

issn = "0031-9007",

publisher = "American Physical Society",

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Vdovin, EE, Mishchenko, A, Greenaway, MT, Zhu, MJ, Ghazaryan, D, Misra, A, Cao, Y, Morozov, SV, Makarovsky, O, Patanè, A, Slotman, GJ, Katsnelson, MI, Geim, AK, Novoselov, KS, Eaves, L & Fromhold, TM 2016, 'Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors', Phys. Rev. Lett., vol. 116, 186603, pp. 1-5. https://doi.org/10.1103/PhysRevLett.116.186603

TY - JOUR

T1 - Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

AU - Vdovin, E. E.

AU - Mishchenko, A.

AU - Greenaway, M. T.

AU - Zhu, M. J.

AU - Ghazaryan, D.

AU - Misra, A.

AU - Cao, Y.

AU - Morozov, S. V.

AU - Makarovsky, O.

AU - Patanè, A.

AU - Slotman, G. J.

AU - Katsnelson, M. I.

AU - Geim, A. K.

AU - Novoselov, K. S.

AU - Eaves, L.

AU - Fromhold, T. M.

PY - 2016/5/5

Y1 - 2016/5/5

N2 - We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.

AB - We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.

KW - cond-mat.mes-hall

U2 - 10.1103/PhysRevLett.116.186603

DO - 10.1103/PhysRevLett.116.186603

M3 - Letter

SN - 0031-9007

VL - 116

SP - 1

EP - 5

JO - Phys. Rev. Lett.

JF - Phys. Rev. Lett.

M1 - 186603

ER -

Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

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