Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

Xinghua Wang; Aimin Song; Jian Liu; Winchao Cheng; Guohua Li; Chengfang Li; Yuexia Li; Jinzhong Yu

Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

Xinghua Wang, Aimin Song, Jian Liu, Winchao Cheng, Guohua Li, Chengfang Li, Yuexia Li, Jinzhong Yu

EEE - Academic & Research

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.

Original language	Undefined
Title of host publication	Proceedings of SPIE - Photonics Technology into the 21st Century
Subtitle of host publication	Semiconductors, Microstructures, and Nanostructures,
Volume	3899
Publication status	Published - 1999

Keywords

Quantum wells
Quantum dots
Reactive ion etching
Gallium arsenide
Wet etching
Etching
Luminescence

Cite this

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title = "Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching",

abstract = "GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.",

keywords = "Quantum wells, Quantum dots, Reactive ion etching, Gallium arsenide, Wet etching, Etching, Luminescence",

author = "Xinghua Wang and Aimin Song and Jian Liu and Winchao Cheng and Guohua Li and Chengfang Li and Yuexia Li and Jinzhong Yu",

year = "1999",

language = "Undefined",

volume = "3899",

booktitle = "Proceedings of SPIE - Photonics Technology into the 21st Century",

}

Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching. / Wang, Xinghua; Song, Aimin; Liu, Jian et al.
Proceedings of SPIE - Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, . Vol. 3899 1999.

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

AU - Wang, Xinghua

AU - Song, Aimin

AU - Liu, Jian

AU - Cheng, Winchao

AU - Li, Guohua

AU - Li, Chengfang

AU - Li, Yuexia

AU - Yu, Jinzhong

PY - 1999

Y1 - 1999

N2 - GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.

AB - GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.

KW - Quantum wells

KW - Quantum dots

KW - Reactive ion etching

KW - Gallium arsenide

KW - Wet etching

KW - Etching

KW - Luminescence

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0033317245&partnerID=MN8TOARS

M3 - Conference contribution

VL - 3899

BT - Proceedings of SPIE - Photonics Technology into the 21st Century

ER -

Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

Abstract

Keywords

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