Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching

Xinghua Wang, Aimin Song, Jian Liu, Winchao Cheng, Guohua Li, Chengfang Li, Yuexia Li, Jinzhong Yu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


GaAs/AlGaAs quantum dot arrays with different dot sizes made by different fabrication processes were studied in this work. In comparison with the reference quantum well, photoluminescence (PL) spectra from the samples at low temperature have demonstrated that PL peak positions shift to higher energy side due to quantization confinement effects and the blue-shift increases with decreasing dot size, PL linewidths are broadened and intensities are much reduced. It is also found that wet chemical etching after reactive ion etching can improve optical properties of the quantum dot arrays.
Original languageUndefined
Title of host publicationProceedings of SPIE - Photonics Technology into the 21st Century
Subtitle of host publicationSemiconductors, Microstructures, and Nanostructures,
Publication statusPublished - 1999


  • Quantum wells
  • Quantum dots
  • Reactive ion etching
  • Gallium arsenide
  • Wet etching
  • Etching
  • Luminescence

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