Photoluminescence investigation of bulk-grown vanadium-doped gallium arsenide

P. S. Gladkov; K. B. Ozanyan

doi:10.1088/0022-3719/18/28/004

Photoluminescence investigation of bulk-grown vanadium-doped gallium arsenide

Research output: Contribution to journal › Article › peer-review

Abstract

The photoluminescence at 10K in HB- and LEC-grown GaAs:V has been studied in the spectral range 0.7-1.52 eV. In n-type HB-grown samples the increase of V concentration hinders the formation of donor-Ga-vacancy complexes. In V-compensated semi-insulating LEC samples, in addition to the well known PL band, which is due to V Ga 3+(3d 2) centre, a broad band at 0.8 eV has been found to be V-related. It probably indicates the presence of a second acceptor-type centre, which should be responsible for the compensation in V-doped gallium arsenide. © 1985 The Institute of Physics.

Original language	English
Pages (from-to)	L915-L920
Journal	Journal of Physics C: Solid State Physics
Volume	18
Issue number	28
DOIs	https://doi.org/10.1088/0022-3719/18/28/004
Publication status	Published - 10 Oct 1985

Access to Document

10.1088/0022-3719/18/28/004

http://iopscience.iop.org/0022-3719/18/28/004/pdf/0022-3719_18_28_004.pdf

Cite this

@article{358b538718c54a84bb56cfa7f6342bb8,

title = "Photoluminescence investigation of bulk-grown vanadium-doped gallium arsenide",

abstract = "The photoluminescence at 10K in HB- and LEC-grown GaAs:V has been studied in the spectral range 0.7-1.52 eV. In n-type HB-grown samples the increase of V concentration hinders the formation of donor-Ga-vacancy complexes. In V-compensated semi-insulating LEC samples, in addition to the well known PL band, which is due to V Ga 3+(3d 2) centre, a broad band at 0.8 eV has been found to be V-related. It probably indicates the presence of a second acceptor-type centre, which should be responsible for the compensation in V-doped gallium arsenide. {\textcopyright} 1985 The Institute of Physics.",

author = "Gladkov, {P. S.} and Ozanyan, {K. B.}",

year = "1985",

month = oct,

day = "10",

doi = "10.1088/0022-3719/18/28/004",

language = "English",

volume = "18",

pages = "L915--L920",

journal = "Journal of Physics C: Solid State Physics",

issn = "0022-3719",

publisher = "Institute of Physics Publishing Ltd",

number = "28",

}

TY - JOUR

T1 - Photoluminescence investigation of bulk-grown vanadium-doped gallium arsenide

AU - Gladkov, P. S.

AU - Ozanyan, K. B.

PY - 1985/10/10

Y1 - 1985/10/10

N2 - The photoluminescence at 10K in HB- and LEC-grown GaAs:V has been studied in the spectral range 0.7-1.52 eV. In n-type HB-grown samples the increase of V concentration hinders the formation of donor-Ga-vacancy complexes. In V-compensated semi-insulating LEC samples, in addition to the well known PL band, which is due to V Ga 3+(3d 2) centre, a broad band at 0.8 eV has been found to be V-related. It probably indicates the presence of a second acceptor-type centre, which should be responsible for the compensation in V-doped gallium arsenide. © 1985 The Institute of Physics.

AB - The photoluminescence at 10K in HB- and LEC-grown GaAs:V has been studied in the spectral range 0.7-1.52 eV. In n-type HB-grown samples the increase of V concentration hinders the formation of donor-Ga-vacancy complexes. In V-compensated semi-insulating LEC samples, in addition to the well known PL band, which is due to V Ga 3+(3d 2) centre, a broad band at 0.8 eV has been found to be V-related. It probably indicates the presence of a second acceptor-type centre, which should be responsible for the compensation in V-doped gallium arsenide. © 1985 The Institute of Physics.

U2 - 10.1088/0022-3719/18/28/004

DO - 10.1088/0022-3719/18/28/004

M3 - Article

SN - 0022-3719

VL - 18

SP - L915-L920

JO - Journal of Physics C: Solid State Physics

JF - Journal of Physics C: Solid State Physics

IS - 28

ER -

Photoluminescence investigation of bulk-grown vanadium-doped gallium arsenide

Abstract

Access to Document

Fingerprint

Cite this