TY - JOUR
T1 - Photoluminescence Studies on Very High-Density Two-Dimensonal Electron Gases in Pseudomorphic Modulation-Doped Quantum Wells
AU - Li, W.
AU - Wang, Z.
AU - Liang, J.
AU - Xu, B.
AU - Zhu, Z.
AU - Song, A.
AU - Zheng, W.
AU - Yang, B.
PY - 1994
Y1 - 1994
N2 - We present photoluminescence studies on highly dense two-dimensional electron gases in selectively Si δ-doped GaAs/In0.18Ga0.82As/Al0.25Ga0.75As quantum wells (Ns = 4.24 × 1012 cm-2). Five well-resolved photoluminescence lines centered at 1.4194, 1.4506, 1.4609, 1.4695 and 1.4808 eV were observed, which are attributed to the subband exciton emission. The subband separations clearly exhibit the feature of a typical quantum well with triangle and square potential. These very intensive and sharp luminescence peaks with linewidths of 2.2 to 3.5 meV indicate the high quality of the structures. Their dependence on the excitation intensity and temperatures are also discussed.
AB - We present photoluminescence studies on highly dense two-dimensional electron gases in selectively Si δ-doped GaAs/In0.18Ga0.82As/Al0.25Ga0.75As quantum wells (Ns = 4.24 × 1012 cm-2). Five well-resolved photoluminescence lines centered at 1.4194, 1.4506, 1.4609, 1.4695 and 1.4808 eV were observed, which are attributed to the subband exciton emission. The subband separations clearly exhibit the feature of a typical quantum well with triangle and square potential. These very intensive and sharp luminescence peaks with linewidths of 2.2 to 3.5 meV indicate the high quality of the structures. Their dependence on the excitation intensity and temperatures are also discussed.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84957334869&partnerID=MN8TOARS
U2 - 10.1088/0256-307X/11/12/012
DO - 10.1088/0256-307X/11/12/012
M3 - Article
SP - 758
EP - 761
JO - Chinese Physics Letters
JF - Chinese Physics Letters
ER -