Photoresponse Modeling and Analysis of InGaP/GaAs Double-HPTs

Hassan A Khan; Ali A Rezazadeh; Yongjian Zhang

doi:10.1109/JQE.2014.2365672

Photoresponse Modeling and Analysis of InGaP/GaAs Double-HPTs

Hassan A Khan
, Ali A Rezazadeh
, Yongjian Zhang

Research output: Contribution to journal › Article › peer-review

Abstract

Photoresponse of GaAs-based double heterojunction phototransistors (DHPTs), in surface-illuminated orientation, has been analyzed with a modified small-signal model. The effect of incident optical illumination on various intrinsic parameters has been discussed for In0.49Ga0.51P/GaAs N+p+N- DHPT. Since the primary detecting material is GaAs, the device is optimized to detect short wavelength at 850nm. A novel formulation for optical flux absorption in DHPTs is also provided along with its comparison with single-HPTs. The analysis of DHPTs presented in this work can be utilized for performance enhancement through device optimization in sensors, photoreceivers in optical networks and remote sensing applications employing integrated circuits.

Original language	English
Article number	JQE-133839-2014
Pages (from-to)	1044-1051
Number of pages	7
Journal	I E E E Journal of Quantum Electronics
Volume	50
DOIs	https://doi.org/10.1109/JQE.2014.2365672
Publication status	Published - 4 Dec 2014

Keywords

Phototransistors, Double-heterojunction, Modeling, frequency response, small signal model.

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10.1109/JQE.2014.2365672

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title = "Photoresponse Modeling and Analysis of InGaP/GaAs Double-HPTs",

abstract = "Photoresponse of GaAs-based double heterojunction phototransistors (DHPTs), in surface-illuminated orientation, has been analyzed with a modified small-signal model. The effect of incident optical illumination on various intrinsic parameters has been discussed for In0.49Ga0.51P/GaAs N+p+N- DHPT. Since the primary detecting material is GaAs, the device is optimized to detect short wavelength at 850nm. A novel formulation for optical flux absorption in DHPTs is also provided along with its comparison with single-HPTs. The analysis of DHPTs presented in this work can be utilized for performance enhancement through device optimization in sensors, photoreceivers in optical networks and remote sensing applications employing integrated circuits.",

keywords = "Phototransistors, Double-heterojunction, Modeling, frequency response, small signal model.",

author = "Khan, \{Hassan A\} and Rezazadeh, \{Ali A\} and Yongjian Zhang",

year = "2014",

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doi = "10.1109/JQE.2014.2365672",

language = "English",

volume = "50",

pages = "1044--1051",

journal = "I E E E Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "IEEE",

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T1 - Photoresponse Modeling and Analysis of InGaP/GaAs Double-HPTs

AU - Khan, Hassan A

AU - Rezazadeh, Ali A

AU - Zhang, Yongjian

PY - 2014/12/4

Y1 - 2014/12/4

N2 - Photoresponse of GaAs-based double heterojunction phototransistors (DHPTs), in surface-illuminated orientation, has been analyzed with a modified small-signal model. The effect of incident optical illumination on various intrinsic parameters has been discussed for In0.49Ga0.51P/GaAs N+p+N- DHPT. Since the primary detecting material is GaAs, the device is optimized to detect short wavelength at 850nm. A novel formulation for optical flux absorption in DHPTs is also provided along with its comparison with single-HPTs. The analysis of DHPTs presented in this work can be utilized for performance enhancement through device optimization in sensors, photoreceivers in optical networks and remote sensing applications employing integrated circuits.

AB - Photoresponse of GaAs-based double heterojunction phototransistors (DHPTs), in surface-illuminated orientation, has been analyzed with a modified small-signal model. The effect of incident optical illumination on various intrinsic parameters has been discussed for In0.49Ga0.51P/GaAs N+p+N- DHPT. Since the primary detecting material is GaAs, the device is optimized to detect short wavelength at 850nm. A novel formulation for optical flux absorption in DHPTs is also provided along with its comparison with single-HPTs. The analysis of DHPTs presented in this work can be utilized for performance enhancement through device optimization in sensors, photoreceivers in optical networks and remote sensing applications employing integrated circuits.

KW - Phototransistors, Double-heterojunction, Modeling, frequency response, small signal model.

U2 - 10.1109/JQE.2014.2365672

DO - 10.1109/JQE.2014.2365672

M3 - Article

SN - 0018-9197

VL - 50

SP - 1044

EP - 1051

JO - I E E E Journal of Quantum Electronics

JF - I E E E Journal of Quantum Electronics

M1 - JQE-133839-2014

ER -

Photoresponse Modeling and Analysis of InGaP/GaAs Double-HPTs

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Keywords

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