Photovoltaic operation up to 270 K of a strain-compensated AlAs/In 0.84 Ga 0.16As/AlAs/InAlAs quantum well infrared photodetector

K. T. Lai; S. K. Haywood; A. H. Mohamed; M. Missous; R. Gupta

doi:10.1063/1.2130379

Photovoltaic operation up to 270 K of a strain-compensated AlAs/In 0.84 Ga 0.16As/AlAs/InAlAs quantum well infrared photodetector

K. T. Lai, S. K. Haywood, A. H. Mohamed, M. Missous, R. Gupta

Research output: Contribution to journal › Article › peer-review

Abstract

We report operation up to 270 K of a strain-compensated AlAs In0.84 Ga0.16 AsAlAs In0.52 Al0.48 As double barrier quantum well infrared photodetector, grown on an InP substrate. The n=1 to n=2 intersubband transition gives a peak detection wavelength of 2.09 μm at 77 K which is in good agreement with the calculated value for a 3 nm quantum well. The conduction band discontinuity between In0.52 Al0.48 As and In0.84 Ga0.16 As is calculated to be 0.675 eV, which offers the possibility of room temperature operation for optimized detectors. © 2005 American Institute of Physics.

Original language	English
Article number	192113
Pages (from-to)	1-3
Number of pages	2
Journal	Applied Physics Letters
Volume	87
Issue number	19
DOIs	https://doi.org/10.1063/1.2130379
Publication status	Published - 7 Nov 2005

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title = "Photovoltaic operation up to 270 K of a strain-compensated AlAs/In 0.84 Ga 0.16As/AlAs/InAlAs quantum well infrared photodetector",

abstract = "We report operation up to 270 K of a strain-compensated AlAs In0.84 Ga0.16 AsAlAs In0.52 Al0.48 As double barrier quantum well infrared photodetector, grown on an InP substrate. The n=1 to n=2 intersubband transition gives a peak detection wavelength of 2.09 μm at 77 K which is in good agreement with the calculated value for a 3 nm quantum well. The conduction band discontinuity between In0.52 Al0.48 As and In0.84 Ga0.16 As is calculated to be 0.675 eV, which offers the possibility of room temperature operation for optimized detectors. {\textcopyright} 2005 American Institute of Physics.",

author = "Lai, {K. T.} and Haywood, {S. K.} and Mohamed, {A. H.} and M. Missous and R. Gupta",

year = "2005",

month = nov,

day = "7",

doi = "10.1063/1.2130379",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Photovoltaic operation up to 270 K of a strain-compensated AlAs/In 0.84 Ga 0.16As/AlAs/InAlAs quantum well infrared photodetector

AU - Lai, K. T.

AU - Haywood, S. K.

AU - Mohamed, A. H.

AU - Missous, M.

AU - Gupta, R.

PY - 2005/11/7

Y1 - 2005/11/7

N2 - We report operation up to 270 K of a strain-compensated AlAs In0.84 Ga0.16 AsAlAs In0.52 Al0.48 As double barrier quantum well infrared photodetector, grown on an InP substrate. The n=1 to n=2 intersubband transition gives a peak detection wavelength of 2.09 μm at 77 K which is in good agreement with the calculated value for a 3 nm quantum well. The conduction band discontinuity between In0.52 Al0.48 As and In0.84 Ga0.16 As is calculated to be 0.675 eV, which offers the possibility of room temperature operation for optimized detectors. © 2005 American Institute of Physics.

AB - We report operation up to 270 K of a strain-compensated AlAs In0.84 Ga0.16 AsAlAs In0.52 Al0.48 As double barrier quantum well infrared photodetector, grown on an InP substrate. The n=1 to n=2 intersubband transition gives a peak detection wavelength of 2.09 μm at 77 K which is in good agreement with the calculated value for a 3 nm quantum well. The conduction band discontinuity between In0.52 Al0.48 As and In0.84 Ga0.16 As is calculated to be 0.675 eV, which offers the possibility of room temperature operation for optimized detectors. © 2005 American Institute of Physics.

U2 - 10.1063/1.2130379

DO - 10.1063/1.2130379

M3 - Article

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192113

ER -

Photovoltaic operation up to 270 K of a strain-compensated AlAs/In 0.84 Ga 0.16As/AlAs/InAlAs quantum well infrared photodetector

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