Physical device modeling of a varactor diode

Alexander R. Masidlover; Andrew A P Gibson

doi:10.1109/TMAG.2004.824570

Physical device modeling of a varactor diode

Alexander R. Masidlover, Andrew A P Gibson

Research output: Contribution to journal › Article › peer-review

Abstract

Starting with the recipe for the fabrication process of a silicon p-n junction varactor diode, the semiconductor device equations are solved using the finite-element method. The capacitance of the reverse biased diode is extracted using the junction depletion width which is quantified by introducing a depletion factor. Validation of the complete modeling process is achieved by fabricating the diode, mounting it on a microwave circuit and comparing experimental scattering parameter data with those predicted by a circuit simulator with the imported physical model.

Original language	English
Pages (from-to)	722-725
Number of pages	3
Journal	Ieee Transactions on Magnetics
Volume	40
Issue number	2
DOIs	https://doi.org/10.1109/TMAG.2004.824570
Publication status	Published - Mar 2004

Keywords

Capacitance
Diodes
Finite-element methods
Parameter estimation

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10.1109/TMAG.2004.824570

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title = "Physical device modeling of a varactor diode",

abstract = "Starting with the recipe for the fabrication process of a silicon p-n junction varactor diode, the semiconductor device equations are solved using the finite-element method. The capacitance of the reverse biased diode is extracted using the junction depletion width which is quantified by introducing a depletion factor. Validation of the complete modeling process is achieved by fabricating the diode, mounting it on a microwave circuit and comparing experimental scattering parameter data with those predicted by a circuit simulator with the imported physical model.",

keywords = "Capacitance, Diodes, Finite-element methods, Parameter estimation",

author = "Masidlover, {Alexander R.} and Gibson, {Andrew A P}",

year = "2004",

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doi = "10.1109/TMAG.2004.824570",

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AB - Starting with the recipe for the fabrication process of a silicon p-n junction varactor diode, the semiconductor device equations are solved using the finite-element method. The capacitance of the reverse biased diode is extracted using the junction depletion width which is quantified by introducing a depletion factor. Validation of the complete modeling process is achieved by fabricating the diode, mounting it on a microwave circuit and comparing experimental scattering parameter data with those predicted by a circuit simulator with the imported physical model.

KW - Capacitance

KW - Diodes

KW - Finite-element methods

KW - Parameter estimation

U2 - 10.1109/TMAG.2004.824570

DO - 10.1109/TMAG.2004.824570

M3 - Article

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EP - 725

JO - Ieee Transactions on Magnetics

JF - Ieee Transactions on Magnetics

IS - 2

ER -

Physical device modeling of a varactor diode

Abstract

Keywords

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