Piezospectroscopic analysis of mobile defects in semiconducting materials

L. Dobaczewski, A. R. Peaker, V. P. Markevich, I. D. Hawkins, K. Bonde Nielsen

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    The piezospectroscopic analysis of point defects allows to describe fixed defects embedded in a crystal environment of immobile atoms. This description works well when all atoms vibrate around fixed equilibrium positions and these vibrations are much faster than the time scale of the experiment while the equilibrium positions do not evolve within this time scale. For some defects this condition is not fulfilled at temperatures of the DLTS experiment, which somehow is reflected in a departure from what the theory predicts. On the other hand, systematic discrepancies between results of theoretical piezospectroscopic analysis and experiment can be a valuable source of information about a defect. We discuss how these re-orientation processes can be identified from the observed piezospectroscopic parameters for a number of defect complexes observed in silicon and germanium with the use of the high-resolution Laplace Deep Level Transient Spectroscopy.

    Original languageEnglish
    Pages (from-to)529-534
    Number of pages6
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume5
    Issue number2
    DOIs
    Publication statusPublished - 1 Dec 2008
    EventE-MRS 2007 Spring Meeting-Symposium F - Novel Gain Materials and Devices Based on III-N-V Compounds - Strasbourg, France
    Duration: 28 May 20071 Jun 2007

    Research Beacons, Institutes and Platforms

    • Photon Science Institute

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