Polymeric spin-valves at room temperature

N. A. Morley; D. Dhandapani; A. Rao; H. Al Qahtani; M. R J Gibbs; M. Grell; D. Eastwood; B. K. Tanner

doi:10.1016/j.synthmet.2010.11.011

Polymeric spin-valves at room temperature

N. A. Morley, D. Dhandapani, A. Rao, H. Al Qahtani, M. R J Gibbs, M. Grell, D. Eastwood, B. K. Tanner

Research output: Contribution to journal › Article › peer-review

Abstract

The organic semiconductor-magnetic electrode interfaces in organic spin-valves are very important for the performance of the device. Here the interfaces between the polymer regio-regular poly(3-hexylthiophene) (RR-P3HT) and the magnetic electrodes Fe50Co50 and Ni 81Fe19 in organic spin-valves were investigated. Extra interlayers were placed at the organic-magnetic interface, which included adding self-assembly molecules between the bottom electrode and the polymer, and 1 nm thick Au and Al2O3 insulating layers between the polymer and the top electrode. The magnetoresistance of the spin-valves was measured to determine how the variations in layers affected magnetotransport. © 2010 Elsevier B.V.

Original language	English
Pages (from-to)	558-562
Number of pages	4
Journal	Synthetic Metals
Volume	161
Issue number	7-8
DOIs	https://doi.org/10.1016/j.synthmet.2010.11.011
Publication status	Published - Apr 2011

Keywords

Interface layers
Magnetoresistance
Organic spintronics
Polymers

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10.1016/j.synthmet.2010.11.011

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title = "Polymeric spin-valves at room temperature",

abstract = "The organic semiconductor-magnetic electrode interfaces in organic spin-valves are very important for the performance of the device. Here the interfaces between the polymer regio-regular poly(3-hexylthiophene) (RR-P3HT) and the magnetic electrodes Fe50Co50 and Ni 81Fe19 in organic spin-valves were investigated. Extra interlayers were placed at the organic-magnetic interface, which included adding self-assembly molecules between the bottom electrode and the polymer, and 1 nm thick Au and Al2O3 insulating layers between the polymer and the top electrode. The magnetoresistance of the spin-valves was measured to determine how the variations in layers affected magnetotransport. {\textcopyright} 2010 Elsevier B.V.",

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author = "Morley, {N. A.} and D. Dhandapani and A. Rao and {Al Qahtani}, H. and Gibbs, {M. R J} and M. Grell and D. Eastwood and Tanner, {B. K.}",

year = "2011",

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doi = "10.1016/j.synthmet.2010.11.011",

language = "English",

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T1 - Polymeric spin-valves at room temperature

AU - Morley, N. A.

AU - Dhandapani, D.

AU - Rao, A.

AU - Al Qahtani, H.

AU - Gibbs, M. R J

AU - Grell, M.

AU - Eastwood, D.

AU - Tanner, B. K.

PY - 2011/4

Y1 - 2011/4

N2 - The organic semiconductor-magnetic electrode interfaces in organic spin-valves are very important for the performance of the device. Here the interfaces between the polymer regio-regular poly(3-hexylthiophene) (RR-P3HT) and the magnetic electrodes Fe50Co50 and Ni 81Fe19 in organic spin-valves were investigated. Extra interlayers were placed at the organic-magnetic interface, which included adding self-assembly molecules between the bottom electrode and the polymer, and 1 nm thick Au and Al2O3 insulating layers between the polymer and the top electrode. The magnetoresistance of the spin-valves was measured to determine how the variations in layers affected magnetotransport. © 2010 Elsevier B.V.

AB - The organic semiconductor-magnetic electrode interfaces in organic spin-valves are very important for the performance of the device. Here the interfaces between the polymer regio-regular poly(3-hexylthiophene) (RR-P3HT) and the magnetic electrodes Fe50Co50 and Ni 81Fe19 in organic spin-valves were investigated. Extra interlayers were placed at the organic-magnetic interface, which included adding self-assembly molecules between the bottom electrode and the polymer, and 1 nm thick Au and Al2O3 insulating layers between the polymer and the top electrode. The magnetoresistance of the spin-valves was measured to determine how the variations in layers affected magnetotransport. © 2010 Elsevier B.V.

KW - Interface layers

KW - Magnetoresistance

KW - Organic spintronics

KW - Polymers

U2 - 10.1016/j.synthmet.2010.11.011

DO - 10.1016/j.synthmet.2010.11.011

M3 - Article

SN - 0379-6779

VL - 161

SP - 558

EP - 562

JO - Synthetic Metals

JF - Synthetic Metals

IS - 7-8

ER -

Polymeric spin-valves at room temperature

Abstract

Keywords

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