Pool-frenkel emission and hopping conduction in semiconducting carbon nanotube transistor

David Perello*, Woojong Yu, Dong Jae Bae, Seung Jin Chae, Moon J. Kim, Young Hee Lee, Minhee Yun

*Corresponding author for this work

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

The effect of using EBL with devices incorporating CNT has also been investigated. The effect on metallic and semiconducting CNT exposure in the channel of the transistor devices was examined and a physical mechanism for the variations discussed. We show that the subsequent generation of trap states along the CNT channel varies the conduction mechanism of the nanotube and has a significant effect on device performance. Metallic and semiconducting CNT react very differently, with an apparent increased localization effect in the metallic tubes responsible for dramatic decreases in conductance.

Original languageEnglish
Title of host publicationCarbon Nanotubes, Graphene, and Associated Devices II
DOIs
Publication statusPublished - 23 Nov 2009
EventCarbon Nanotubes, Graphene, and Associated Devices II - San Diego, CA, United States
Duration: 5 Aug 20096 Aug 2009

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7399
ISSN (Print)0277-786X

Conference

ConferenceCarbon Nanotubes, Graphene, and Associated Devices II
Country/TerritoryUnited States
CitySan Diego, CA
Period5/08/096/08/09

Keywords

  • Carbon nanotubes
  • Electron beam lithography
  • Electron irradiation
  • Field effect transistor

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