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Post-annealing effect of low temperature atomic layer deposited Al2O3 on the top gate IGZO TFT
Shuaiying Zheng, Shaocong Lv, Chengyuan Wang, Zhijun Li, Liwei Dong, Qian Xin, Aimin Song, Jiawei Zhang, Yuxiang Li
Research output: Contribution to journal › Article › peer-review