Post-stress/breakdown leakage mechanism in ultrathin high-κ (HfO2)x(SiO2)1-x/SiO2 gate stacks: a nanoscale conductive-atomic force microscopy C-AFM

[Unknown] Uppal; H.J. Markevich; [Unknown] V.; S.N. Volkos; A. Dimoulas; B. Hamilton; A.R. Peaker

Post-stress/breakdown leakage mechanism in ultrathin high-κ (HfO2)x(SiO2)1-x/SiO2 gate stacks: a nanoscale conductive-atomic force microscopy C-AFM

[Unknown] Uppal, H.J. Markevich, [Unknown] V., S.N. Volkos, A. Dimoulas, B. Hamilton, A.R. Peaker

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

Conductive atomic force microscopy (C-AFM) in ultra high vacuum (UHV) has been used to characterize charge trapping in ultrathin as-deposited oxide films of 2-4 nm (HfO2)x(SiO2)1-x/SiO2 multilayer gate stacks. Pre-and post-stress/breakdown (BD) dielectric degradation is analyzed on a nanoscale. A systematic observation probes stress induced trap generation facilitating physical stack BD. Degradation is considered in terms of the pronounced localized leakage contribution through the high-κ and interlayer SiOx. Simultaneous nanoscale current-voltage (I-V) characteristics and C-AFM imaging illustrates charge trapping/decay from the native or stress induced traps with intrinsic charge lateral propagation. A post-stress/BD constant voltage imaging shows effects of stress bias polarity on the BD induced topography and trap assisted nano-current variations. Physical attributes of deformed artifacts relate strongly to the polarity of electron injection (gate or substrate) so discriminating the trap generation in high-κ and interlayer SiOx revealing non-homogeneous (dynamic) nature of leakage.

Original language	English
Title of host publication	host publication
Place of Publication	Warrendale, PA, USA
Publisher	Materials Research Society
Publication status	Published - 2009
Event	Performance and Reliability of Semiconductor Devices Symposium, - Boston, MA, USA Duration: 30 Nov 2008 → 3 Dec 2008

Conference

Conference	Performance and Reliability of Semiconductor Devices Symposium,
City	Boston, MA, USA
Period	30/11/08 → 3/12/08

Keywords

atomic force microscopy - dielectric materials - electric breakdown - electron traps - hafnium compounds - high-k dielectric thin films - hole traps - leakage currents - multilayers - silicon compounds post-stress-breakdown leakage mechanism - ultrathin high-κ multilayer gate stack - UHV nanoscale conductive-atomic force microscopy - ultrahigh vacuum C-AFM - charge trapping - oxide films - dielectric degradation - stress induced trap generation - localized leakage - current-voltage characteristics - charge decay - intrinsic charge lateral propagation - constant voltage imaging - stress bias polarity - trap assisted nanocurrent variation - deformed artifacts - electron injection - size 2 nm to 4 nm - (HfO2)x(SiO2)1-x-SiO2

Cite this

@inproceedings{406f3f7a4ff242fb81a676f0befd5336,

title = "Post-stress/breakdown leakage mechanism in ultrathin high-κ (HfO2)x(SiO2)1-x/SiO2 gate stacks: a nanoscale conductive-atomic force microscopy C-AFM",

abstract = "Conductive atomic force microscopy (C-AFM) in ultra high vacuum (UHV) has been used to characterize charge trapping in ultrathin as-deposited oxide films of 2-4 nm (HfO2)x(SiO2)1-x/SiO2 multilayer gate stacks. Pre-and post-stress/breakdown (BD) dielectric degradation is analyzed on a nanoscale. A systematic observation probes stress induced trap generation facilitating physical stack BD. Degradation is considered in terms of the pronounced localized leakage contribution through the high-κ and interlayer SiOx. Simultaneous nanoscale current-voltage (I-V) characteristics and C-AFM imaging illustrates charge trapping/decay from the native or stress induced traps with intrinsic charge lateral propagation. A post-stress/BD constant voltage imaging shows effects of stress bias polarity on the BD induced topography and trap assisted nano-current variations. Physical attributes of deformed artifacts relate strongly to the polarity of electron injection (gate or substrate) so discriminating the trap generation in high-κ and interlayer SiOx revealing non-homogeneous (dynamic) nature of leakage.",

keywords = "atomic force microscopy - dielectric materials - electric breakdown - electron traps - hafnium compounds - high-k dielectric thin films - hole traps - leakage currents - multilayers - silicon compounds post-stress-breakdown leakage mechanism - ultrathin high-κ multilayer gate stack - UHV nanoscale conductive-atomic force microscopy - ultrahigh vacuum C-AFM - charge trapping - oxide films - dielectric degradation - stress induced trap generation - localized leakage - current-voltage characteristics - charge decay - intrinsic charge lateral propagation - constant voltage imaging - stress bias polarity - trap assisted nanocurrent variation - deformed artifacts - electron injection - size 2 nm to 4 nm - (HfO2)x(SiO2)1-x-SiO2",

author = "[Unknown] Uppal and H.J. Markevich and [Unknown] V. and S.N. Volkos and A. Dimoulas and B. Hamilton and A.R. Peaker",

year = "2009",

language = "English",

booktitle = "host publication",

publisher = "Materials Research Society",

address = "United States",

note = "Performance and Reliability of Semiconductor Devices Symposium, ; Conference date: 30-11-2008 Through 03-12-2008",

}

Uppal, U, Markevich, HJ, V., U, Volkos, SN, Dimoulas, A, Hamilton, B & Peaker, AR 2009, Post-stress/breakdown leakage mechanism in ultrathin high-κ (HfO2)x(SiO2)1-x/SiO2 gate stacks: a nanoscale conductive-atomic force microscopy C-AFM. in host publication. Materials Research Society, Warrendale, PA, USA, Performance and Reliability of Semiconductor Devices Symposium, Boston, MA, USA, 30/11/08.

Post-stress/breakdown leakage mechanism in ultrathin high-κ (HfO2)x(SiO2)1-x/SiO2 gate stacks: a nanoscale conductive-atomic force microscopy C-AFM. / Uppal, [Unknown]; Markevich, H.J.; V., [Unknown] et al.
host publication. Warrendale, PA, USA: Materials Research Society, 2009.

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Post-stress/breakdown leakage mechanism in ultrathin high-κ (HfO2)x(SiO2)1-x/SiO2 gate stacks: a nanoscale conductive-atomic force microscopy C-AFM

AU - Uppal, [Unknown]

AU - Markevich, H.J.

AU - V., [Unknown]

AU - Volkos, S.N.

AU - Dimoulas, A.

AU - Hamilton, B.

AU - Peaker, A.R.

PY - 2009

Y1 - 2009

N2 - Conductive atomic force microscopy (C-AFM) in ultra high vacuum (UHV) has been used to characterize charge trapping in ultrathin as-deposited oxide films of 2-4 nm (HfO2)x(SiO2)1-x/SiO2 multilayer gate stacks. Pre-and post-stress/breakdown (BD) dielectric degradation is analyzed on a nanoscale. A systematic observation probes stress induced trap generation facilitating physical stack BD. Degradation is considered in terms of the pronounced localized leakage contribution through the high-κ and interlayer SiOx. Simultaneous nanoscale current-voltage (I-V) characteristics and C-AFM imaging illustrates charge trapping/decay from the native or stress induced traps with intrinsic charge lateral propagation. A post-stress/BD constant voltage imaging shows effects of stress bias polarity on the BD induced topography and trap assisted nano-current variations. Physical attributes of deformed artifacts relate strongly to the polarity of electron injection (gate or substrate) so discriminating the trap generation in high-κ and interlayer SiOx revealing non-homogeneous (dynamic) nature of leakage.

AB - Conductive atomic force microscopy (C-AFM) in ultra high vacuum (UHV) has been used to characterize charge trapping in ultrathin as-deposited oxide films of 2-4 nm (HfO2)x(SiO2)1-x/SiO2 multilayer gate stacks. Pre-and post-stress/breakdown (BD) dielectric degradation is analyzed on a nanoscale. A systematic observation probes stress induced trap generation facilitating physical stack BD. Degradation is considered in terms of the pronounced localized leakage contribution through the high-κ and interlayer SiOx. Simultaneous nanoscale current-voltage (I-V) characteristics and C-AFM imaging illustrates charge trapping/decay from the native or stress induced traps with intrinsic charge lateral propagation. A post-stress/BD constant voltage imaging shows effects of stress bias polarity on the BD induced topography and trap assisted nano-current variations. Physical attributes of deformed artifacts relate strongly to the polarity of electron injection (gate or substrate) so discriminating the trap generation in high-κ and interlayer SiOx revealing non-homogeneous (dynamic) nature of leakage.

KW - atomic force microscopy - dielectric materials - electric breakdown - electron traps - hafnium compounds - high-k dielectric thin films - hole traps - leakage currents - multilayers - silicon compounds post-stress-breakdown leakage mechanism - ultrathin h

M3 - Conference contribution

BT - host publication

PB - Materials Research Society

CY - Warrendale, PA, USA

T2 - Performance and Reliability of Semiconductor Devices Symposium,

Y2 - 30 November 2008 through 3 December 2008

ER -

Post-stress/breakdown leakage mechanism in ultrathin high-κ (HfO2)x(SiO2)1-x/SiO2 gate stacks: a nanoscale conductive-atomic force microscopy C-AFM

Abstract

Conference

Keywords

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