Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czocharlski-grown silicon

Michelle Vaqueiro Contreras; Vladimir Markevich; Matthew Halsall; Anthony Peaker; P Santos; J. Coutinho; S. Öberg; L. I. Murin; R Falster; J Binns; E. V. Monakhov; B. G. Svensson

doi:10.1002/pssr.201700133

Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czocharlski-grown silicon

Michelle Vaqueiro Contreras, Vladimir Markevich, Matthew Halsall, Anthony Peaker, P Santos, J. Coutinho, S. Öberg, L. I. Murin, R Falster, J Binns, E. V. Monakhov, B. G. Svensson

Research output: Contribution to journal › Article › peer-review

Abstract

It has been acknowledged for over 50 years that treatments with hydrogen can improve silicon semiconductor devices. In recent years these have been used to an advantage in silicon solar cells reducing the loss of photo-generated carriers at the silicon surface or at the silicon interface with dielectrics. However, we have found that in some types of silicon the in-diffusion of hydrogen can result in the
formation of powerful recombination centers composed of carbon, oxygen and hydrogen which reduce the carrier lifetime and ultimately the efficiency of solar cells made from such material.

Original language	English
Article number	1700133
Journal	physica status solidi (RRL) – Rapid Research Letters
Volume	11
Issue number	8
Early online date	27 Jun 2017
DOIs	https://doi.org/10.1002/pssr.201700133
Publication status	Published - 18 Aug 2017

Keywords

Czochralski silicon
Recombination center
Carbon-oxygen and hydrogen
MCTS

Research Beacons, Institutes and Platforms

National Graphene Institute

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/pssr.201700133

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Vaqueiro Contreras, M., Markevich, V., Halsall, M., Peaker, A., Santos, P., Coutinho, J., Öberg, S., Murin, L. I., Falster, R., Binns, J., Monakhov, E. V., & Svensson, B. G. (2017). Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czocharlski-grown silicon. physica status solidi (RRL) – Rapid Research Letters, 11(8), Article 1700133. https://doi.org/10.1002/pssr.201700133

@article{5e93c8d824384571900143f4df1d9d68,

title = "Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czocharlski-grown silicon",

abstract = "It has been acknowledged for over 50 years that treatments with hydrogen can improve silicon semiconductor devices. In recent years these have been used to an advantage in silicon solar cells reducing the loss of photo-generated carriers at the silicon surface or at the silicon interface with dielectrics. However, we have found that in some types of silicon the in-diffusion of hydrogen can result in theformation of powerful recombination centers composed of carbon, oxygen and hydrogen which reduce the carrier lifetime and ultimately the efficiency of solar cells made from such material.",

keywords = "Czochralski silicon, Recombination center, Carbon-oxygen and hydrogen, MCTS",

author = "{Vaqueiro Contreras}, Michelle and Vladimir Markevich and Matthew Halsall and Anthony Peaker and P Santos and J. Coutinho and S. {\"O}berg and Murin, {L. I.} and R Falster and J Binns and Monakhov, {E. V.} and Svensson, {B. G.}",

year = "2017",

month = aug,

day = "18",

doi = "10.1002/pssr.201700133",

language = "English",

volume = "11",

journal = "physica status solidi (RRL) – Rapid Research Letters",

issn = "1862-6270",

publisher = "John Wiley & Sons Ltd",

number = "8",

}

Vaqueiro Contreras, M, Markevich, V, Halsall, M , Peaker, A, Santos, P, Coutinho, J, Öberg, S, Murin, LI, Falster, R, Binns, J, Monakhov, EV & Svensson, BG 2017, 'Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czocharlski-grown silicon', physica status solidi (RRL) – Rapid Research Letters, vol. 11, no. 8, 1700133. https://doi.org/10.1002/pssr.201700133

Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czocharlski-grown silicon. / Vaqueiro Contreras, Michelle; Markevich, Vladimir; Halsall, Matthew et al.
In: physica status solidi (RRL) – Rapid Research Letters, Vol. 11, No. 8, 1700133, 18.08.2017.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czocharlski-grown silicon

AU - Vaqueiro Contreras, Michelle

AU - Markevich, Vladimir

AU - Halsall, Matthew

AU - Peaker, Anthony

AU - Santos, P

AU - Coutinho, J.

AU - Öberg, S.

AU - Murin, L. I.

AU - Falster, R

AU - Binns, J

AU - Monakhov, E. V.

AU - Svensson, B. G.

PY - 2017/8/18

Y1 - 2017/8/18

N2 - It has been acknowledged for over 50 years that treatments with hydrogen can improve silicon semiconductor devices. In recent years these have been used to an advantage in silicon solar cells reducing the loss of photo-generated carriers at the silicon surface or at the silicon interface with dielectrics. However, we have found that in some types of silicon the in-diffusion of hydrogen can result in theformation of powerful recombination centers composed of carbon, oxygen and hydrogen which reduce the carrier lifetime and ultimately the efficiency of solar cells made from such material.

AB - It has been acknowledged for over 50 years that treatments with hydrogen can improve silicon semiconductor devices. In recent years these have been used to an advantage in silicon solar cells reducing the loss of photo-generated carriers at the silicon surface or at the silicon interface with dielectrics. However, we have found that in some types of silicon the in-diffusion of hydrogen can result in theformation of powerful recombination centers composed of carbon, oxygen and hydrogen which reduce the carrier lifetime and ultimately the efficiency of solar cells made from such material.

KW - Czochralski silicon

KW - Recombination center

KW - Carbon-oxygen and hydrogen

KW - MCTS

U2 - 10.1002/pssr.201700133

DO - 10.1002/pssr.201700133

M3 - Article

SN - 1862-6270

VL - 11

JO - physica status solidi (RRL) – Rapid Research Letters

JF - physica status solidi (RRL) – Rapid Research Letters

IS - 8

M1 - 1700133

ER -

Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czocharlski-grown silicon

Abstract

Keywords

Research Beacons, Institutes and Platforms

UN SDGs

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