Precision growth for the manufacture of semiconductor heterostructure devices

R. K. Hayden; M. Missous; M. J. Kelly

doi:10.1088/0268-1242/16/8/306

Precision growth for the manufacture of semiconductor heterostructure devices

R. K. Hayden^*, M. Missous, M. J. Kelly

^*Corresponding author for this work

EEE - Academic & Research

Research output: Contribution to journal › Article › peer-review

Abstract

A simple method, using ex situ materials analysis for frequent re-calibration achieves the precision and accuracy required for the growth of semiconductor heterostructures for commercial device fabrication. Electrical characteristics of tunnel devices from wafers grown months apart using this method have very little variation.

Original language	English
Pages (from-to)	676-678
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	16
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/16/8/306
Publication status	Published - 22 Jun 2001

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title = "Precision growth for the manufacture of semiconductor heterostructure devices",

abstract = "A simple method, using ex situ materials analysis for frequent re-calibration achieves the precision and accuracy required for the growth of semiconductor heterostructures for commercial device fabrication. Electrical characteristics of tunnel devices from wafers grown months apart using this method have very little variation.",

author = "Hayden, {R. K.} and M. Missous and Kelly, {M. J.}",

year = "2001",

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AU - Hayden, R. K.

AU - Missous, M.

AU - Kelly, M. J.

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Y1 - 2001/6/22

N2 - A simple method, using ex situ materials analysis for frequent re-calibration achieves the precision and accuracy required for the growth of semiconductor heterostructures for commercial device fabrication. Electrical characteristics of tunnel devices from wafers grown months apart using this method have very little variation.

AB - A simple method, using ex situ materials analysis for frequent re-calibration achieves the precision and accuracy required for the growth of semiconductor heterostructures for commercial device fabrication. Electrical characteristics of tunnel devices from wafers grown months apart using this method have very little variation.

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M3 - Article

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

ER -

Precision growth for the manufacture of semiconductor heterostructure devices

Abstract

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