Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa

P. Harmer, M. P. Halsall, D. Wolverson, P. J. Parbrook, S. J. Henley

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We report a high-pressure study of the room temperature photoluminescence from an Al0.1Ga0.9N epilayer and GaN buffer grown by low-pressure metalorganic vapour phase epitaxy on sapphire. An excimer laser based lift-off technique was used for the processing of the epilayer, which enables the loading of strain-relaxed samples of epitaxial nitride materials into a diamond anvil cell apparatus. In this way the band gap pressure dependences of an Al0.1Ga0.9N epilayer and its GaN buffer layer were measured up to a pressure of 19 GPa. The measured band gaps were found to follow the expected theoretical dependences with some modification of the deformation potentials determined by previous lower pressure studies. Above 19 GPa, no photoluminescence was observed, possibly due to a structural phase transition in the Al0.1Ga0.9N epilayer.
    Original languageEnglish
    Pages (from-to)L22-L24
    JournalSemiconductor Science and Technology
    Volume19
    Issue number3
    DOIs
    Publication statusPublished - Mar 2004

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