Abstract
Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (???13) for sp(3)-defects, it decreases for vacancy-like defects (???7), and it reaches a minimum for boundaries in graphite (???3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.
Original language | English |
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Pages (from-to) | 3925-30 |
Number of pages | 3894 |
Journal | Nano Letters |
Volume | 12 |
Issue number | 8 |
DOIs | |
Publication status | Published - Aug 2012 |
Keywords
- conductive AFM
- defects
- Graphene
- Raman spectroscopy