Probing the nature of defects in graphene by Raman spectroscopy.

Axel Eckmann, Alexandre Felten, Artem Mishchenko, Liam Britnell, Ralph Krupke, Kostya S Novoselov, Cinzia Casiraghi

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    Abstract

    Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (???13) for sp(3)-defects, it decreases for vacancy-like defects (???7), and it reaches a minimum for boundaries in graphite (???3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.
    Original languageEnglish
    Pages (from-to)3925-30
    Number of pages3894
    JournalNano Letters
    Volume12
    Issue number8
    DOIs
    Publication statusPublished - Aug 2012

    Keywords

    • conductive AFM
    • defects
    • Graphene
    • Raman spectroscopy

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