Proceedings of Symposium T, E-MRS 2006 Spring Meeting on "Germanium based semiconductors from materials to devices" Materials Science in Semiconductor Processing, Volume 9, Issues 4-5, August-October 2006

Cor Claeys (Editor), Tony Peaker (Editor), Bengt Svensson (Editor), Jan Vanhellemont (Editor)

    Research output: Book/ReportBookpeer-review

    Abstract

    The first international symposium on Germanium- Based Semiconductorsyfrom Materials to Devices was held at Nice, France, on May 29?June 2, 2006 as part of the European MRS 2006 Spring Meeting. In total, 124 papers were presented of which 2 keynote talks, 16 invited presentations, 50 contributed oral presentations and 56 poster presentations. The content of the symposium was quite broad, starting with a historic review moving through techniques of bulk growth to state of the art technologies for germanium on insulator and localised growth aimed at mainstream integrated circuit applications. Defects and processing issues were considered in detail as was interaction with high-k gate dielectrics. Device performance was discussed and contrasted not only with silicon but also with III?V compounds. There were a few papers on traditional niche applications but the majority focused on mainstream integrated circuits. The symposium ended with a session devoted specifically to germanium nanostructures. These Proceedings contain a selection of 78 manuscripts. The international interest in the field is clearly illustrated by the fact that the authors of these papers are coming from 34 different countries including Algeria, Austria, Belarus, Belgium, Brazil, China, Croatia, Denmark, Finland, France, Germany, Greece, Hong Kong, India, Italy, Ireland, Japan, Lithuania, Norway, Poland, Portugal, Russia, Slovenia, South Africa, Spain, Sweden, Switzerland, Taiwan, Tunisia, Turkey, Ukraine, United Kingdom, United States of America and Uzbekistan. The papers in the Proceedings are organized in 7 sections, i.e., Plenary, Crystal Growth, Diffusion and Theory, Defects in Germanium, Processing Aspects, Device Performance, Characterization, and Nanostructures and Magnetics. Overall, they give a very good overview of the status and ongoing activities in the different subfields. The editors acknowledge all the authors for the on-time submission of their manuscripts. Specials thanks are going to the session chairs who gave us support by reviewing the manuscripts. The keynote and invited speakers are acknowledged for making this symposium possible by sharing their perspectives and insights and by putting considerable effort in the preparation of their manuscript. We also want to acknowledge the contributions of the Session Chairs in guiding the sessions. The symposium was financially supported by SOITEC, UMICORE and the EU Network of Excellence SINANO. Finally, we would like to thank E-MRS for offering the opportunity to run this symposium and for the smooth organisation. As a general conclusion it can be stated that the symposium came at the right time and that there is a strong world-wide interest in Ge-related issues. The fundamental research is surely triggered by the interest of the device manufacturers. Considerable progress has been made recently in the fabrication of high-quality Ge and GeOI substrates.Whether or not Ge-based, deep submicron devices will experience a major breakthrough still remains unsure because of the processing difficulties with n-channel devices. There are indications that the future may be the hybrid integration of Ge-based p-channel devices with n-type components on strained silicon or III?V materials.
    Original languageEnglish
    PublisherElsevier BV
    ISBN (Print)1369-8001
    Publication statusPublished - 2006

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