Processing semiconductor material for ultra-fast silicon-germanium hetero-junction bipolar transistor in wireless and optical communication involves use of impurity material in semiconductor material to control diffusion of primary dopant

Huda El Mubarek (Other), Mubarek H El (Other), P Ashburn (Other)

    Research output: Patent

    Abstract

    NOVELTY - Processing a semiconductor material containing primary dopant and impurity material involves thermal processing to activate the dopant material. The impurity material reduces the diffusion of the primary dopant during thermal processing. The semiconductor sample is silicon-germanium, silicon-germanium-carbon, germanium and/or strained silicon. The primary dopant material gives p- and/or n-type doping of the semiconductor material. USE - Used for an ultra-fast silicon-germanium hetero-junction bipolar transistor used in wireless and optical communication, a silicon bipolar junction transistor, a silicon-germanium hetero-junction bipolar transistor, an NPN transistor, silicon-germanium metal oxide semiconductor devices and germanium implanted silicon bipolar junction transistors. ADVANTAGE - The impurities can provide good control of the undesirable diffusion of n-type and p-type dopant materials. Thus, the distribution of dopant material within the semiconductor can be controlled and confined to a desired region, giving a desired structure for the semiconductor sample. The process offers a useful technique for achieving precise dopant positioning, allowing the fabrication of improved semiconductor devices. The process is attractively simple and highly flexible, since conventional semiconductor production and processing techniques can be used. The process is widely applicable to a range of semiconductor structures, so the sample may be formed or selected with any structure as required, depending on the intended application for the semiconductor sample. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a semiconductor material sample.
    Original languageEnglish
    Patent numberWO2004082028-A1
    Publication statusPublished - 2004

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